Wiring Substrate Bumpless Through-Hole Connection

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Solution Overview

Problem

Existing wiring substrates with silicon or glass layers face challenges in increasing connection density and reliability due to technical limitations in forming bump connections and uniformly filling underfill resin between the silicon or glass layer and the core substrate, especially when the silicon layer is thin.

Innovation Solution

A wiring substrate configuration that eliminates the need for bumps by forming through-holes in the core substrate and filling them with conductive material to directly connect linear conductors, allowing for increased connection density and reliability without the use of underfill resin.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bump connections are used to electrically connect the silicon layer and core substrate, then electrical connection is achieved, but connection density is restricted due to technical limitations in forming bumps and positioning

Engineering Contradiction:
Improveconnection reliabilityVSAvoidconnection density
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The invention extracts and eliminates the bump structure from the connection system. Instead of using bumps to bridge the silicon layer and core substrate, the patent forms through-holes directly through the core substrate and fills them with conductive material to create direct electrical connections, thereby removing the limiting factor of bump formation technology and achieving higher connection density

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention segments the connection process into distinct steps: forming through-holes in the core substrate, filling them with conductive material, and establishing direct electrical connections. This segmentation allows each step to be optimized independently, particularly enabling higher connection density by eliminating the positioning and formation limitations of bump connections

Inventive Principle:
Principle #1Segmentation

2Reliability

If underfill resin is used to fill the space between silicon layer and core substrate, then bump connection reliability is improved, but uniform and complete filling is difficult to achieve

Engineering Contradiction:
Improvebump connection reliabilityVSAvoidunderfill resin filling uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The invention extracts and eliminates the underfill resin from the connection system. By removing the bump structure, the need for underfill resin disappears entirely, thereby eliminating the manufacturing precision issues associated with achieving uniform and complete filling of underfill resin in the space between the silicon layer and core substrate

Inventive Principle:
Principle #2Taking out (Extraction)

3Adaptability or versatility

If thin silicon layer (e.g., 50 μm) is used, then device integration is improved, but handling difficulty increases at the time of bump connection

Engineering Contradiction:
Improvedevice integrationVSAvoidsilicon layer handling
Core Design Contradiction:
Adaptability or versatilityVSEase of operation

Solution Approach 1:

The invention extracts and eliminates the bump connection process from the manufacturing sequence. By forming through-holes directly in the core substrate and filling them with conductive material, the patent removes the need to handle and position bumps on thin silicon layers, thereby maintaining ease of operation even when using thin silicon layers for improved device integration

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of forming connections on the silicon layer and then attaching it to the core substrate, the invention inverts the process by forming through-holes and conductive connections directly in the core substrate first, then attaching the thin silicon layer. This inversion makes the process of handling thin silicon layers much easier and more manageable

Inventive Principle:
Principle #13The other way round (Inversion)

4Productivity

If through-holes are formed in core substrate and filled with conductive material to eliminate bumps, then connection density is increased, but through-hole formation energy requirement may increase

Engineering Contradiction:
Improveconnection densityVSAvoidthrough-hole formation energy
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The invention replaces traditional mechanical bump formation and positioning systems with a process of forming through-holes in the core substrate and filling them with conductive material. This substitution enables higher connection density by eliminating the physical constraints of bump structures, while the energy required for through-hole formation can be optimized through appropriate manufacturing process selection

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances connection density and reliability by eliminating the need for bumps and improving handling of thin silicon layers, while reducing the energy required for through-hole formation.

Implementation Method 1

one end of the penetration line is electrically connected to a corresponding part of the linear conductors, without intervention of a bump

Methodology Applied
Scientific EffectConduction (electrical): Conduction (electrical)

Data Source

PatentUS9006586B2Wiring substrate, its manufacturing method, and semiconductor device
Publication Date: 2015.04.14 SHINKO ELECTRIC IND CO LTD
  • US9006586B2 patent drawing
  • US9006586B2 patent drawing
  • US9006586B2 patent drawing

AI summary

One embodiment provides a wiring substrate including: a core substrate having an insulative base member, the insulative base member having a first surface and a second surface, a plurality of linear conductors penetrating through the insulative base member from the first surface to the second surface; an inorganic material layer joined to at least one of the first surface and the second surface of the insulative base member; and a penetration line penetrating through the inorganic material layer, wherein one end of the penetration line is electrically connected to a corresponding part of the linear conductors, without intervention of a bump.