Wiring Substrate Ni/Au Plating Over-Etching Prevention

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Solution Overview

Problem

Conventional methods for forming a Ni/Au plating film on wiring substrates often result in over-etching of copper patterns, leading to hollow end portions and potential breakage, which can cause short circuits due to the fragility of the Ni/Au alloy and the thickness of the Ni plating film.

Innovation Solution

A method involving the formation of a conductor circuit with a solder resist layer, a plating resist layer, and an etching resist layer to control the deposition and removal of the Ni/Au metal film, ensuring it is only on the necessary portions and preventing over-etching by exposing copper under the Ni/Au film, thereby reducing the risk of film drop-off and short circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the Ni/Au plating film is formed on the lead pattern using electrolytic plating, then connection reliability is improved, but over-etching of copper patterns occurs leading to hollow end portions and potential breakage

Engineering Contradiction:
Improveconnection reliabilityVSAvoidetching precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by forming the Ni/Au plating film on the lead pattern before the etching process. The plating film serves as a protective layer that prevents over-etching of the copper patterns during subsequent etching steps. This preliminary protective measure ensures that the copper patterns are not excessively removed, avoiding hollow end portions and potential breakage while maintaining connection reliability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The Ni/Au plating film acts as an intermediary protective layer between the copper patterns and the etching solution. During the etching process, the plating film mediates by preventing direct contact between the etching solution and the copper patterns, thereby controlling the etching depth and preventing over-etching. This intermediary function maintains the integrity of the copper patterns while allowing the etching process to proceed.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the Ni/Au plating film is made thicker to improve connection reliability, then connection reliability is improved, but the risk of film drop-off and short circuits increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoidfilm drop-off and short circuit risk
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter changes by optimizing the thickness of the Ni plating film to a specific range (0.5-3 μm) that balances connection reliability with the risk of film drop-off. By controlling the Ni plating thickness within this optimized range, the patent achieves sufficient connection reliability while minimizing the harmful effects of excessive thickness, such as film drop-off and short circuits between independent wirings.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If electrolytic plating is used instead of electroless plating, then manufacturing cost is reduced, but process complexity increases due to lead pattern removal requirements

Engineering Contradiction:
Improvemanufacturing costVSAvoidprocess complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by forming the Ni/Au plating film on the lead pattern before the etching process. This preliminary plating step simplifies the subsequent etching process by providing a protective layer that prevents over-etching, thereby reducing the complexity of the overall process. The preliminary action of plating first allows for more controlled and simpler etching operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The Ni/Au plating film serves as an intermediary that simplifies the etching process by acting as a protective barrier. During the etching process, the plating film mediates by preventing direct etching of the copper patterns, thereby reducing the complexity of controlling etching depths and preventing over-etching. This intermediary function makes the overall manufacturing process more manageable despite using electrolytic plating.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents the Ni/Au plating film from dropping off and reduces the risk of short circuits between independent wirings, allowing for a thinner Ni film and improved connection reliability between electronic parts and the wiring substrate.

Implementation Method 1

The Ni/Au plating film is formed using electrolytic plating in place of electroless plating

Methodology Applied
Scientific EffectElectrolytic plating: Electroplating

Implementation Method 2

removing a portion of the lead pattern not covered with the Ni/Au plating film by etching

Methodology Applied
Scientific EffectEtching:

Data Source

PatentUS8110752B2Wiring substrate and method for manufacturing the same
Publication Date: 2012.02.07 IBIDEN CO LTD
  • US8110752B2 patent drawing
  • US8110752B2 patent drawing
  • US8110752B2 patent drawing

AI summary

A method for manufacturing a wiring substrate includes forming a conductor circuit on an insulating layer, the conductor circuit including a pad, a circuit pattern connected to the pad, and a lead pattern connected to the pad. A solder resist layer is formed on the circuit pattern and on the insulating layer, and a plating resist layer is formed on the lead pattern and on the insulating layer and forming a metal film on a first portion of the conductor circuit not covered by the solder resist layer and not covered by the plating resist layer. The plating resist layer is removed to expose a second portion of the conductor circuit adjacent to the first portion of the conductor circuit and not covered with the metal film, and an etching resist layer is formed on the metal film and on the second portion of the conductor circuit. A third portion of the conductor circuit not covered by the etching resist layer is removed by etching, and the etching resist is removed. The conductor circuit covered with the etching resist layer is a part of the second portion of the conductor circuit exposed by removing the plating resist.