Wiring Substrate Production via Solid Electrolyte Membrane Deposition

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Solution Overview

Problem

Conventional methods for producing wiring substrates using plating techniques often result in metal deposition outside the intended wiring pattern, leading to short circuits and difficulties in selective removal of excess metal, necessitating a method to prevent or reduce metal deposition in unintended regions.

Innovation Solution

A method involving a seeded substrate with a conductive undercoat layer and seed layer, covered by an insulation layer, where a metal layer is formed using a solid electrolyte membrane and voltage application, with the insulation layer's etching and removal allowing selective metal deposition only on the seed layer, preventing deposition in other regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional plating method is used to form wiring, then metal film can be deposited on substrate, but metal deposits in regions other than predetermined wiring pattern causing short circuits

Engineering Contradiction:
Improvewiring pattern precisionVSAvoidmetal deposition in unintended regions
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies preliminary action by forming a resist pattern before the plating process. The resist pattern is applied to the substrate before the metal film formation, creating a pre-defined mask that prevents metal deposition in unintended regions. This preliminary masking action ensures that metal only deposits on the seed layer in the predetermined wiring pattern areas, eliminating short circuits while maintaining manufacturing precision.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses an intermediary approach by introducing a resist pattern as a mediator between the plating process and the substrate. The resist pattern acts as a temporary barrier that controls metal deposition spatially. After the metal film is formed on the seed layer through the resist pattern, the resist is removed, leaving only the desired wiring pattern without metal deposition in unintended regions.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If resist mask is used to prevent metal deposition in unintended regions, then wiring pattern precision is improved, but production cost and time increase

Engineering Contradiction:
Improvewiring pattern precisionVSAvoidproduction efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent extracts the essential function of the resist mask by using a seed layer with predetermined pattern instead. The seed layer is formed only in the predetermined wiring pattern regions before plating, eliminating the need for separate resist mask application. This extraction of the masking function into the seed layer formation process simplifies the overall process, reducing production steps, time, and cost while maintaining wiring pattern precision.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the mask formation and seed layer formation into a single integrated process. Instead of separately applying resist mask and then forming seed layer, the method combines these steps by directly forming the seed layer in the predetermined pattern, which serves both as the structural base and the deposition mask. This merging reduces the number of process steps, improving productivity while maintaining precision.

Inventive Principle:
Principle #5Merging (Combining)

3Productivity

If metal deposition is performed without selective removal step, then production time is reduced, but metal in unintended regions causes short circuits

Engineering Contradiction:
Improveproduction speedVSAvoidshort circuit prevention
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by forming the seed layer with predetermined pattern before the metal deposition process. This pre-formed seed layer structure inherently guides metal deposition only to the intended wiring pattern regions, eliminating the need for subsequent selective removal steps. The preliminary pattern definition ensures both high production speed and reliable short circuit prevention simultaneously.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively prevents or reduces metal deposition in regions outside the predetermined wiring pattern, enabling efficient production of wiring substrates without the need for resist masks, reducing production costs and time while maintaining high deposition rates.

Implementation Method 1

a solid electrolyte membrane containing a metal ion-containing aqueous solution being disposed between the seed layer and the anode

Methodology Applied
Scientific EffectIon conduction: Conduction (electrical)

Implementation Method 2

applying a voltage between the anode and the substrate to deposit the metal on the substrate surface

Methodology Applied
Scientific EffectElectrochemical deposition: Electroplating

Data Source

PatentUS11425823B2Method for producing wiring substrate
Publication Date: 2022.08.23 TOYOTA JIDOSHA KK
  • US11425823B2 patent drawing
  • US11425823B2 patent drawing
  • US11425823B2 patent drawing

AI summary

The present disclosure provides a method for producing a wiring substrate. A seeded substrate including an insulation substrate, a conductive undercoat layer, and a conductive seed layer provided in a first region, in that order, is first prepared. An insulation layer covering the seed layer and the undercoat layer is then formed. Subsequently, the insulation layer is etched to expose a surface of the seed layer and form a remaining insulation layer covering the undercoat layer in the second region. Subsequently, a voltage is applied between an anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing aqueous solution disposed between the seed layer and the anode and the membrane and the seed layer pressed into contact with each other, thereby a metal layer being formed on the surface of the seed layer. Thereafter, the remaining insulation layer is removed and the undercoat layer is etched.