Redistribution Wiring Support Pattern for Ball Land Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

High-integration semiconductor devices require reliable connection of substrates with increased wiring density, which poses challenges in maintaining structural stability and electrical characteristics, especially in areas not supported by the substrate's passivation layer or conductive pads.

Innovation Solution

The semiconductor device incorporates a substrate with a redistribution layer, ball lands, passivation layers, and signal wiring lines, including a support pattern with a wider width than the first and second wiring patterns, extending from the passivation layer onto the ball land across a space region, to enhance structural stability and electrical connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the wiring density of the substrate is increased to meet high-integration semiconductor devices, then the electrical connectivity and integration capacity are improved, but the structural stability and reliability of the wiring lines deteriorate, especially in unsupported regions

Engineering Contradiction:
Improveintegration capacityVSAvoidstructural stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies local quality by creating a support pattern with a wider width specifically in the space region where wiring lines lack substrate support. This localized structural enhancement provides additional mechanical strength exactly where needed, while maintaining the overall high wiring density design. The support pattern's increased width (greater than the wiring line width) creates a reinforced zone that prevents wiring damage in the previously vulnerable unsupported area.

Inventive Principle:
Principle #3Local quality

2Productivity

If the wiring lines are made thinner to increase wiring density, then the integration capacity is improved, but the mechanical strength and resistance to external impacts deteriorate

Engineering Contradiction:
Improvewiring densityVSAvoidmechanical strength
Core Design Contradiction:
ProductivityVSStrength

Solution Approach 1:

The support pattern acts as an intermediary structural element between the thin wiring lines and the substrate. This mediator provides mechanical reinforcement to the fragile thin wiring lines without interfering with their electrical function. The support pattern's wider width creates a protective foundation that shields the thin wiring lines from external impacts and mechanical stress, allowing high wiring density to be achieved while maintaining adequate mechanical strength.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Strength

If the support pattern width is increased to improve structural stability, then the mechanical strength is improved, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvestructural stabilityVSAvoidpattern complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent segments the wiring line structure into two distinct parts: the original wiring line with its standard width for electrical connectivity, and the additional support pattern with wider width for mechanical reinforcement. This segmentation allows each component to be optimized for its specific function while being manufactured through standard photolithography processes. The support pattern is formed as a separate structural element that can be defined using conventional manufacturing techniques, avoiding the need for complex multi-step processes.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250183139A1Semiconductor device
Publication Date: 2025.06.05 SAMSUNG ELECTRONICS CO LTD
  • US20250183139A1 patent drawing
  • US20250183139A1 patent drawing
  • US20250183139A1 patent drawing

AI summary

A semiconductor device includes a substrate comprising a redistribution layer, a ball land provided on a bottom surface of the redistribution layer, a passivation layer surrounding the ball land on the bottom surface of the redistribution layer and spaced apart from the ball land by a space region formed between the passivation layer and the ball land, and a signal wiring line provided in the redistribution layer on the ball land, a semiconductor chip mounted on the substrate, and an external terminal adhered to the ball land. The signal wiring line includes a first wiring pattern extending in a first direction perpendicular to one side surface of the semiconductor chip, and a support pattern disposed under the one side surface of the semiconductor chip. A second width of the support pattern in a second direction is greater than a first width of the wiring pattern in the second direction.