Wafer Level Package Internal Metallization Layer Thermal Management

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Traditional wafer level packaging structures lack an internal conductive layer, which limits their ability to efficiently manage heat and electromagnetic interference (EMI) and reduces internal signal densities, as the existing metallization layers are not positioned optimally to provide effective shielding and heat spreading.

Innovation Solution

Incorporating an internal metallization layer within the compound mold, which is patterned to form electrical connections and structures such as heat spreaders, shields, and wiring layers, and is closer to the semiconductor die, allowing for improved thermal management and EMI shielding by reducing thermal resistance and proximity to noise sources.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If traditional wafer level packaging structures are used without an internal conductive layer, then the manufacturing process is simpler, but heat spreading and EMI shielding performance are insufficient

Engineering Contradiction:

Improveheat spreading performanceVSAvoidpackage structure complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The patent embeds an internal metallization layer within the compound mold structure, nesting the conductive layer inside the packaging material. This allows the conductive layer to be positioned close to the die for effective heat spreading and EMI shielding while maintaining a compact overall package structure.

Inventive Principle:

Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent introduces a new dimensional element by adding an internal metallization layer at a specific depth within the compound mold, rather than only using surface-level metallization. This internal positioning in the vertical dimension enables improved thermal and electromagnetic performance without significantly increasing horizontal footprint.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Object-affected harmful factors

If an internal metallization layer is added closer to the die, then EMI shielding performance improves, but manufacturing complexity increases

Engineering Contradiction:

ImproveEMI shielding performanceVSAvoidmanufacturing process complexity

Core Design Contradiction:

Object-affected harmful factorsVSEase of manufacture

Solution Approach 1:

The patent forms the internal metallization layer during the wafer-level packaging process before the compound mold is fully cured or sealed. This preliminary formation of the conductive layer allows for easier integration and reduces the need for additional post-processing steps that would increase manufacturing complexity.

Inventive Principle:

Principle #10Preliminary action

3Temperature

If metallization layers are positioned farther from the die, then manufacturing is easier, but thermal resistance increases and heat spreading is reduced

Engineering Contradiction:

Improvethermal resistanceVSAvoidmetallization positioning difficulty

Core Design Contradiction:

TemperatureVSEase of manufacture

Solution Approach 1:

The internal metallization layer is nested within the compound mold at an optimized distance from the die, typically positioned in the lower portion of the mold cavity. This nested positioning achieves low thermal resistance by being close to the heat source while remaining manufacturable through standard wafer-level packaging processes.

Inventive Principle:

Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The internal metallization layer enhances heat spreading and shielding performance, leading to increased signal densities and overall package performance by being closer to the die, thus enabling higher performance and efficiency in semiconductor packages.

Implementation Method 1

the internal metallization layer enhances heat spreading and shielding performance, leading to increased signal densities and overall package performance by being closer to the die, thus enabling higher performance and efficiency in semiconductor packages

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

Incorporating an internal metallization layer within the compound mold, which is patterned to form electrical connections and structures such as heat spreaders, shields, and wiring layers

Methodology Applied

Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS11424209B2Wafer level package structure with internal conductive layer

Publication Date: 2022.08.23 INTEL CORP

AI summary

An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.