WO3-x Pd Nanocluster Hydrogen Sensor Resisting Humidity

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Solution Overview

Problem

Current hydrogen sensors face challenges in selectively detecting hydrogen due to interference from humidity changes, which affect the electrical signal and reduce selectivity.

Innovation Solution

A hydrogen-sensitive material is developed, comprising a 3D porous non-conductive metal oxide substrate with a nano-scale WO3-x film and diffusely distributed Pd nanoclusters, which resists humidity interference and exhibits excellent selectivity for hydrogen.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If MOS-based sensors are used for hydrogen detection, then the sensor can detect hydrogen gas, but humidity interference causes false alarms and reduces selectivity

Engineering Contradiction:
Improvehydrogen detection selectivityVSAvoidhumidity interference
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent uses a composite material structure consisting of SnO2 semiconductor substrate combined with Pd (palladium) coating layers. This composite structure leverages the hydrogen sensitivity of SnO2 while the Pd layer provides selective hydrogen catalysis and reduces sensitivity to other gases including humidity, thereby resolving the selectivity issue.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies Pd nanoclusters with specific size distribution (0.5-5 nm) diffusely distributed on the SnO2 surface. This local quality approach creates regions with enhanced hydrogen catalytic activity while maintaining overall sensor selectivity, as the Pd nanoclusters specifically catalyze hydrogen dissociation without responding equally to other gases.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If Pd nanoclusters are added to improve hydrogen selectivity, then detection precision improves, but device complexity increases

Engineering Contradiction:
Improvehydrogen detection selectivityVSAvoidsensor structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent replaces complex multi-layer Pd structures with a simpler SnO2-based resistive sensor design. By using the inherent properties of SnO2 semiconductor and combining it with catalytic Pd nanoclusters, the system achieves high selectivity without requiring complex mechanical or structural arrangements, thus reducing device complexity while maintaining precision.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The hydrogen sensor demonstrates significant resistance to humidity interference, with initial resistance changes controlled within 3% and response sensitivity fluctuations within 10%, while maintaining excellent selectivity for hydrogen and a low working temperature.

Implementation Method 1

the nano-scale WO3-x film is formed from oxygen vacancy-containing tungsten oxide

Methodology Applied
Scientific EffectCatalysis: Catalysis

Implementation Method 2

Pd nanoclusters diffusely distributed on a surface of the nano-scale WO3-x film

Methodology Applied
Scientific EffectCatalysis: Catalysis

Implementation Method 3

conducting a first atomic layer deposition (ALD) on the 3D porous non-conductive metal oxide substrate

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 4

a 3D porous non-conductive metal oxide substrate, a nano-scale WO3-x film deposited on an outer surface and an inner pore surface

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentUS12216073B2Hydrogen-sensitive material resistant to humidity interference, semiconductor resistive hydrogen sensor, and intelligent hydrogen sensing system, and preparation method and use thereof
Publication Date: 2025.02.04 JIANGSU UNIV
  • US12216073B2 patent drawing
  • US12216073B2 patent drawing
  • US12216073B2 patent drawing

AI summary

Provided are a hydrogen-sensitive material resistant to humidity interference, a semiconductor resistive hydrogen sensor, and an intelligent hydrogen sensing system, and a preparation method and use thereof, which relate to the technical field of gas sensors. The hydrogen-sensitive material resistant to humidity interference includes a three-dimensional (3D) porous non-conductive metal oxide substrate, a nano-scale WO3-x film deposited on an outer surface and an inner pore surface of the 3D porous non-conductive metal oxide substrate, and Pd nanoclusters diffusely distributed on a surface of the nano-scale WO3-x film, wherein the nano-scale WO3-x film is formed from oxygen vacancy-containing tungsten oxide.