Word Line Bonding Defect Detection in Non-Volatile Memory
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Solution Overview
Problem
Current technologies lack a comprehensive method to detect all types of bonding defects, including open, resistive, and short defects, in hybrid bonded non-volatile memory devices, which are crucial for ensuring high-performance and high-density semiconductor memory devices.
Innovation Solution
A non-volatile memory device equipped with a bonding defect detection circuit that analyzes the precharge and discharge speeds of word lines to identify open, resistive, and short defects by comparing these characteristics against reference values using a comparator, counter, and decision circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hybrid bonding technology is applied to implement high-performance and high-density non-volatile memory devices, then integration and performance are improved, but bonding defects occur due to alignment errors between dies
Solution Approach 1:
The patent applies preliminary action by performing defect detection before final product completion. The bonding defect detection circuit is integrated into the device structure beforehand, enabling early detection of open, resistive, and short defects in word line bondings during manufacturing testing, thus preventing defective products from reaching market
2Reliability
If comprehensive defect detection is implemented to identify all types of bonding defects, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies universality by designing a multi-functional bonding defect detection circuit that can detect all three types of bonding defects (open, resistive, and short defects) using a single integrated circuit structure. The detection circuit utilizes existing word line bondings and voltage generators, making the same circuit serve both normal device operation and comprehensive defect detection purposes
Solution Approach 2:
The patent applies self-service by using the device's own internal components (voltage generators, word line bondings, and memory cell structures) to perform the defect detection function. The bonding defect detection circuit leverages the existing device architecture rather than requiring entirely separate external testing equipment, thus reducing overall system complexity
Data Source
AI summary
A non-volatile memory device includes a cell array including memory cells connected to a word line; a voltage generator to generate a word line voltage and provide the word line voltage to the word line; a word line bonding electrically connecting the voltage generator and the word line; and a bonding defect detection circuit connected to a first node between the voltage generator and the word line bonding, and to detect a voltage level of the first node in a precharge section or a development section of the word line to determine whether there is a defect in the word line bonding, detect a precharge speed of the word line in the precharge section to identify an open defect or a resistive defect, and detect a discharge speed of the word line that has been precharged in the development section to identify a short defect in the word line bonding.