Word Line Buffer Structure for Uniform Recrystallization
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Solution Overview
Problem
Semiconductor devices with buried-channel array transistors suffer from issues such as void generation and non-uniform recrystallization of grains during thermal treatment, affecting electrical performance due to diverse interfaces between work function layers and adjacent films.
Innovation Solution
A semiconductor device design featuring a word line structure with a buffer structure between work function layers, which contacts multiple surfaces of the doped-polysilicon layer, ensuring uniform interfaces and recrystallization, thereby mitigating void generation and maintaining electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a buried-channel array transistor (BCAT) device is used to improve short channel effect, then the short channel effect is improved, but void generation occurs and electrical performance is adversely affected
Solution Approach 1:
A buffer layer is introduced as an intermediary between the work function layer and the gate dielectric layer. This buffer layer mediates the interaction between these two layers, preventing direct contact that would otherwise lead to void formation at the interface during thermal treatment processes.
Solution Approach 2:
The buffer layer is deposited beforehand to cushion or absorb the stress and interface diversity issues that would otherwise occur between the work function layer and gate dielectric layer during subsequent thermal processing, preventing void formation before it can happen.
2Stability of the object's composition
If thermal treatment is performed on the word line structure, then grain recrystallization occurs, but non-uniform recrystallization and void generation occur due to diverse interfaces
Solution Approach 1:
The buffer layer provides a uniform and homogeneous interface between the work function layer and gate dielectric layer, ensuring consistent thermal and structural properties across the entire interface. This homogeneity enables uniform grain recrystallization during thermal treatment without the non-uniformity caused by diverse interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The buffer structure ensures uniform forces during thermal treatment, preventing void formation and maintaining the electrical performance of semiconductor devices by reducing interface diversity and promoting uniform recrystallization of grains.
Implementation Method 1
the extents of recrystallization of grains in the word function layer at the interfaces between the work function layer and its adjacent layers or films can be relatively uniform
Implementation Method 2
performing a thermal treatment on the doped-polysilicon layer
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate having a trench. The method also includes forming a first buffer layer in the trench. The method further includes forming a doped-polysilicon layer on the first buffer layer in the trench. The method also includes performing a thermal treatment on the doped-polysilicon layer.