Word Line and Isolation Trench Layout for Dense Semiconductor Cells
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Solution Overview
Problem
The increasing integration density of semiconductor devices leads to a deterioration in their reliability, necessitating techniques to improve the electrical characteristics of these devices.
Innovation Solution
A semiconductor device design that includes a substrate with trenches of different widths, a device isolation layer that partially fills these trenches, and a word line intersecting the active pattern, with specific isolation patterns and filling patterns to enhance electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the integration density of semiconductor devices is increased, then the device size is reduced and functionality is enhanced, but the reliability and electrical characteristics of the device deteriorate
Solution Approach 1:
The device isolation layer is segmented into multiple patterns (first isolation pattern, second isolation pattern, and filling pattern) that selectively fill different trenches. This segmentation allows different regions to have different isolation heights, preventing uniform stress distribution that would harm reliability while maintaining high integration density.
Solution Approach 2:
Different portions of the device isolation layer are given different heights and filling characteristics. The first isolation pattern covers a portion of the second trench, the second isolation pattern covers the remaining portion, and the filling pattern fills the first trench. This creates local variations in isolation quality that improve electrical characteristics in specific regions without compromising overall device reliability.
2Area of stationary object
If the integration density is increased, then more components can be placed in a smaller area, but the electrical characteristics and performance of the device deteriorate
Solution Approach 1:
The solution extends the isolation structure into the vertical dimension by creating multiple isolation patterns at different heights. The first isolation pattern, second isolation pattern, and filling pattern are arranged vertically to provide multi-level isolation, effectively using the third dimension to improve electrical characteristics without increasing the horizontal footprint of the device.
Data Source
AI summary
A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.