Word Line Kicking for Non-Volatile Storage Sensing
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Solution Overview
Problem
Existing non-volatile storage technologies face delays in sensing operations due to the time required for voltage stabilization on word lines during read and program verify processes, especially when multiple read reference voltages are applied, impacting overall sensing time.
Innovation Solution
Applying a kicking voltage to a selected word line during transitions between reference voltages helps to quickly stabilize the voltage across the entire line, allowing bit lines to be sensed sooner.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple read reference voltages are applied to determine memory cell states, then measurement precision is improved, but loss of time increases due to voltage stabilization delays
Solution Approach 1:
A kicking voltage is applied to the selected word line before the actual read reference voltage to pre-charge or pre-discharge the word line capacitance. This preliminary action reduces the time required for the word line voltage to stabilize when transitioning between different read reference voltage levels, thereby reducing sensing time while maintaining measurement precision
Solution Approach 2:
The patent introduces a kicking voltage parameter that is temporarily applied during voltage transitions. By changing the voltage parameter dynamically (applying kicking voltage only during transitions between reference voltages), the system accelerates voltage stabilization without affecting the accuracy of memory cell state determination at the actual read reference voltage levels
2Productivity
If voltage stabilization time is reduced by applying kicking voltage, then productivity is improved, but device complexity increases
Solution Approach 1:
The kicking voltage acts as an intermediary mechanism between the voltage source and the word line. It is applied temporarily during transitions to assist voltage stabilization, then removed. This intermediary approach accelerates voltage changes without requiring permanent structural modifications to the memory device, thus improving productivity with minimal increase in device complexity
3Loss of time
If the voltage transition speed on word line is increased, then loss of time is reduced, but stability of the object's composition deteriorates during transition
Solution Approach 1:
The kicking voltage is applied periodically or transiently only during voltage transitions between reference levels, not continuously. This periodic application accelerates voltage changes during transitions (reducing loss of time) while allowing the system to return to stable states during actual sensing operations (maintaining voltage stability when needed)
Data Source
AI summary
Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.