Memory Word Line Layout for Compact Sense Amplifier Integration
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Solution Overview
Problem
Current semiconductor memory devices face challenges in reducing external size while maintaining circuit area, particularly in integrating a sense amplifier, due to the complexity of interconnects and transistor arrangements in the transfer regions.
Innovation Solution
The semiconductor memory device employs a structure where gate sharing transistors and gate separation transistors are strategically used in different regions to optimize interconnect routing and reduce the area occupied by transistors, allowing for a compact design that integrates a sense amplifier and column control circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If gate sharing transistors and gate separation transistors are used in transfer regions, then interconnect routing is optimized and transistor area is reduced, but device complexity increases due to the strategic arrangement requirements
Solution Approach 1:
The transfer region is divided into multiple sub-regions, with gate sharing transistors placed in first sub-regions and gate separation transistors placed in second sub-regions. This segmentation allows optimization of interconnect routing in different areas while managing transistor arrangement complexity through systematic zoning.
Solution Approach 2:
Different transistor types are strategically assigned to different spatial locations within the transfer region. Gate sharing transistors are used in specific sub-regions where their structure benefits interconnect routing, while gate separation transistors are used in other sub-regions, creating local optimization rather than uniform design.
2Length of stationary object
If external size is reduced, then device compactness is improved, but circuit area maintenance becomes difficult due to interconnect complexity
Solution Approach 1:
The patent utilizes vertical stacking of conductive layers to route interconnects in the third dimension rather than only in the planar direction. This allows compact external footprint while maintaining sufficient circuit area through multi-layer interconnect routing that passes through transfer regions efficiently.
Solution Approach 2:
The transfer regions serve multiple functions: they contain transistors for signal transfer, provide routing paths for interconnects between memory cell arrays and peripheral circuits, and enable compact layout through the strategic placement of gate sharing and gate separation transistors. This multi-functionality allows external size reduction without sacrificing circuit area.
Data Source
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AI summary
According to one embodiment, a semiconductor memory device (10) includes first (WL0), second (WL1), third (WL3) and fourth (WL4) word lines coupled to first, second, third and fourth memory cells, respectively. A first transistor (WLSW0) includes a first gate and is electrically coupled to the first word line. A second transistor (WLSW1) includes a second gate and is electrically coupled to the second word line. A third transistor (WLSW3) includes a third gate and is electrically coupled to the third word line. A fourth transistor (WLSW4) includes a fourth gate and is electrically coupled to the fourth word line. The first gate is included in a first conductive layer. The second gate is included in a second conductive layer arranged away from the first conductive layer. The third and fourth gates are included in a third conductive layer which is integral and continuous.