Memory Word Line Precharge Voltage Control
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Solution Overview
Problem
As memory densities increase, the physical proximity of word lines in memory cells leads to increased coupling capacitance, affecting the reliability and efficiency of memory operations.
Innovation Solution
The proposed solution involves an operation method for a memory system that includes applying a precharge voltage to a selected word line, reducing the voltage on adjacent non-selected word lines before precharging, and applying a voltage pulse to the selected word line before precharging, to control voltage variations and shorten precharging duration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory density is increased, then storage capacity is improved, but coupling capacitance between adjacent word lines increases
Solution Approach 1:
The patent applies preliminary anti-action by reducing the voltage of non-selected word lines before the precharge operation. This preliminary voltage reduction counteracts the harmful coupling effect that would otherwise cause unwanted voltage changes in non-selected word lines when the selected word line is precharged, thereby resolving the contradiction between high memory density and coupling capacitance interference.
Solution Approach 2:
The patent implements preliminary action by applying a voltage pulse to the selected word line before the precharge operation. This preliminary voltage pulse ensures that the selected word line reaches the appropriate voltage level faster, reducing the precharge time and minimizing the duration during which coupling capacitance can affect non-selected word lines.
2Reliability
If precharge voltage is applied to selected word line, then word line voltage is restored, but precharging duration is extended
Solution Approach 1:
The patent applies preliminary action by reducing the voltage of non-selected word lines before the precharge operation. This preliminary voltage reduction prevents voltage buildup in non-selected word lines through coupling capacitance, allowing the precharge operation to complete faster while still ensuring proper voltage restoration of the selected word line, thus reducing precharging duration without compromising reliability.
3Object-affected harmful factors
If voltage is reduced on adjacent non-selected word lines, then coupling effect impact is reduced, but additional control complexity is introduced
Solution Approach 1:
The patent applies segmentation by dividing the voltage control into different stages: a first voltage for non-selected word lines before precharge, and a second voltage during precharge. This staged voltage control approach systematically manages coupling effects while keeping the control logic organized and manageable, resolving the contradiction between reducing coupling impact and maintaining control simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the impact of coupling effects between word lines, improving the start voltage for precharging and shortening the precharging duration, thereby enhancing memory performance.
Implementation Method 1
coupling capacitance between adjacent word lines increases
Data Source
AI summary
Examples of the present disclosure provide a memory, an operation method thereof, and a memory system. The memory comprises a memory cell array and a peripheral circuit coupled to the memory cell array, wherein the memory cell array comprises a plurality of word lines. The operation method comprises: applying a precharge voltage to a selected word line of the plurality of word lines at a first moment; changing a voltage applied to a non-selected word line adjacent to the selected word line from a first voltage to a second voltage at a second moment before the first moment, wherein the first voltage is greater than the second voltage; and applying a voltage pulse to the selected word line at a third moment before the first moment.