Word Line Through-Via Layout for High-Density DRAM Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices shrink in size, their performance deteriorates due to challenges in reliably forming and integrating smaller elements, particularly in dynamic random-access memory (DRAM) where reduced sizes lead to performance degradation.
Innovation Solution
A semiconductor device design that includes a first structure with a memory block region and an extension region, and a second structure with a peripheral circuit region vertically overlapping the memory block region. This design features memory cells with vertical channel transistors and data storage structures, along with a word line signal path that includes a word line routing through-via penetrating the semiconductor body, enhancing signal connectivity and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If element sizes are reduced to increase integration density, then integration density is improved, but performance deteriorates due to reliability issues in forming and integrating smaller elements
Solution Approach 1:
The patent transitions from planar transistor layouts to vertically stacked three-dimensional structures, including multiple memory cell layers stacked above substrate and peripheral circuit regions. This vertical stacking enables increased integration density without further reducing individual element dimensions, thereby maintaining performance while achieving higher density.
Solution Approach 2:
The semiconductor device is divided into distinct functional regions: substrate memory cell regions, intermediate memory cell regions, and peripheral circuit regions, each with optimized structures. This segmentation allows different regions to be independently optimized for their specific functions while maintaining overall system performance.
2Quantity of substance
If element sizes are reduced, then integration density is improved, but manufacturing precision becomes more difficult to achieve
Solution Approach 1:
By stacking memory cell layers vertically in the third dimension rather than packing them horizontally, the patent achieves high integration density without requiring extremely precise lateral alignment at scaled dimensions. The vertical stacking approach uses through-vias and interlayer connections that can be formed with current manufacturing capabilities.
Solution Approach 2:
The patent employs preliminary formation of sacrificial structures, mandrel patterns, and spacer layers before final device formation. These preliminary structures serve as templates and guides for subsequent self-aligned processes, ensuring precise positioning without requiring high-precision direct patterning at the final device dimensions.
3Quantity of substance
If vertical channel transistors and stacked structures are used to increase integration density, then device complexity increases
Solution Approach 1:
The patent employs universal formation processes for both memory cell regions and peripheral circuit regions, using the same substrate preparation, transistor formation, and interconnection techniques. This multi-functionality approach reduces overall process complexity despite the three-dimensional stacked architecture, as the same toolset and methodologies are applied across different functional areas.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a first structure having a memory block region and an extension region; and a second structure having a peripheral circuit region. The first structure includes memory cells and a word line. The second structure includes a semiconductor body; a through-insulating pattern in the semiconductor body; and a peripheral transistor. The first and second structures include a word line signal path electrically connecting the word line to the peripheral transistor. The word line signal path includes a word line contact that is in contact with the word line in the extension region; a word line routing lower structure electrically connected to the word line contact and extending from the extension region into the memory block region; and a word line routing connection structure electrically connecting the word line routing lower structure to the word line routing peripheral structure.