Word Line Voltage Regulation in Semiconductor Memory
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Solution Overview
Problem
Conventional semiconductor memories, such as DRAM, face high power consumption due to the need for boosting external input voltage to the word line driver circuit, leading to inefficient power usage and potential voltage thresholds not being met, especially in stacked layer configurations.
Innovation Solution
A semiconductor memory system incorporating a memory chip and a voltage regulation unit that converts an external input voltage into a second voltage for the word line driver circuit, reducing power consumption by optimizing voltage supply and distribution, potentially with multiple voltage regulation units for each memory chip to minimize power burden and voltage drops.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If external input voltage is boosted to increase write speed, then write speed is improved, but power consumption increases
Solution Approach 1:
The patent divides the voltage supply system into multiple independent voltage regulation units, each serving specific memory chips or word line driver circuits. This segmentation allows each unit to regulate voltage locally without requiring system-wide voltage boosting, thereby reducing overall power consumption while maintaining adequate write speeds.
Solution Approach 2:
The patent changes the voltage parameter by introducing voltage regulation units that convert a first voltage to a second voltage locally at each memory chip or driver circuit. This local voltage conversion eliminates the need for high-voltage boosting across the entire system, reducing power consumption while ensuring sufficient voltage for write operations.
2Reliability
If external input voltage is boosted to operate word line driver circuit, then circuit operation is ensured, but power efficiency deteriorates
Solution Approach 1:
The patent introduces voltage regulation units as intermediary components between the external input voltage source and the word line driver circuits. These regulation units act as mediators that convert voltage locally, ensuring reliable circuit operation without requiring high-power voltage boosting from the external source, thus improving power efficiency.
3Reliability
If voltage is boosted for stacked layer DRAM, then operational capability is maintained, but power consumption worsens
Solution Approach 1:
The patent applies segmentation by placing voltage regulation units at different levels or chips within the stacked layer structure. Each regulation unit serves its local memory chips or driver circuits, eliminating the need for high-voltage boosting across the entire stacked structure. This localized approach maintains operational capability while significantly reducing power consumption.
4Use of energy by moving object
If voltage regulation unit converts external input voltage, then power consumption is reduced, but voltage threshold may not be met
Solution Approach 1:
The voltage regulation units dynamically adjust the output voltage parameter based on the specific requirements of each memory chip or driver circuit. By converting the external input voltage to appropriate local voltage levels, the system reduces power consumption while ensuring that each circuit receives sufficient voltage to meet its operational threshold requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption and ensures the word line driver circuit receives a sufficient voltage, enhancing power efficiency and reducing parasitic resistances and capacitances, thereby lowering overall power dissipation and enabling efficient data-read and data-write operations.
Implementation Method 1
the voltage regulation unit can be configured to convert an external input first voltage into a second voltage to be provided to a word line driver circuit
Data Source
AI summary
A semiconductor memory is provided. The semiconductor memory comprises a memory chip and a voltage regulation unit. The memory chip includes at least a storage array and the voltage regulation unit includes at least an operational amplifier. The voltage regulation unit is configured to convert an external input first voltage into a second voltage to be provided to a word line driver circuit associated with the memory chip. The first voltage is greater than the second voltage. According to the semiconductor memory provided, power consumption of the memory chip (or the semiconductor memory) is reduced and the second voltage provided to the word line driver circuit reaches a threshold voltage.