Word Line Voltage Sequencing for Faster Non-Volatile Memory Sensing
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Solution Overview
Problem
Non-volatile memory devices face challenges in reducing word line setup time and improving sensing performance due to increased integration density, which leads to longer loading times and reduced sensing performance.
Innovation Solution
A method and device that control the voltage applied to a selected word line in three stages: a first section for noise inhibition, a second section for overdrive, and a third section for applying the target voltage, with the duration and voltage levels adjusted based on the target voltage level to reduce loading time and enhance sensing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration density is increased, then storage capacity is improved, but word line loading time increases and sensing performance deteriorates
Solution Approach 1:
The sensing time is divided into three distinct sections: a first section for noise inhibition, a second section for overdrive voltage application, and a third section for target voltage application. This segmentation allows each phase to be optimized independently, reducing overall loading time while maintaining sensing performance despite increased integration density
Solution Approach 2:
Before applying the target voltage to the word line, the method first applies a preliminary overdrive voltage in the second section, which prepares the memory cell by inhibiting noise and establishing proper voltage conditions. This preliminary action ensures that when the target voltage is applied in the third section, the sensing operation can proceed efficiently without delays caused by noise interference or improper voltage establishment
2Quantity of substance
If integration density is increased, then storage capacity is improved, but sensing performance deteriorates
Solution Approach 1:
The sensing operation is segmented into three time sections with distinct voltage levels applied to the word line in each section. The first section applies a first voltage level for noise inhibition, the second section applies a second voltage level for overdrive, and the third section applies a third voltage level (target voltage) for actual sensing. This segmentation allows noise to be suppressed during critical sensing phases while maintaining proper voltage levels for accurate sensing, thereby preserving sensing performance despite increased integration density
Solution Approach 2:
The method applies preliminary anti-action by inhibiting noise in the first section before the sensing operation begins. By applying a specific voltage level during the first section that suppresses noise interference, the method prevents noise from degrading sensing performance. This preliminary protective action ensures that when sensing occurs in the third section, the signal quality remains high even in high-density memory configurations where noise is more prevalent
Data Source
AI summary
A method of operating a non-volatile memory device includes performing a first sensing operation on the non-volatile memory device during a first sensing time including a first section, a second section, and a third section. The performing of the first sensing operation includes applying a first voltage level, which is variable according to a first target voltage level, to a selected word line in the first section, applying a second voltage level, which is different from the first voltage level, to the selected word line in the second section, and applying the first target voltage level, which is different from the second voltage level, to the selected word line in the third section. The first voltage level becomes greater as the first target voltage level becomes greater.