Wordline Timing and Overdrive Control at Corner Temperatures
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Memory devices experience reliability issues due to read window budget (RWB) degradation at extreme temperatures, leading to increased bit errors and error rates, particularly in wordlines with limited margins.
Innovation Solution
Implementing adaptive time sense parameters and overdrive voltage parameters for wordlines at corner temperatures, applying longer time sense and higher overdrive voltage only to wordlines with significant RWB limitations at extreme temperatures, while using default parameters at normal temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If default time sense parameters are used at all temperatures, then device complexity is reduced, but reliability deteriorates at corner temperatures due to RWB degradation
Solution Approach 1:
The patent implements dynamic time sense parameter adjustment based on temperature conditions. The system transitions from static default parameters to dynamic parameters that adapt to corner temperature conditions, enabling the memory device to maintain optimal performance across varying thermal environments without requiring complete redesign of the control logic.
Solution Approach 2:
The patent changes the time sense parameter values based on temperature thresholds. At corner temperatures, the system applies different time sense parameters compared to normal operating temperatures, allowing the memory device to compensate for RWB degradation through parameter modification rather than structural change.
2Reliability
If adaptive time sense parameters are applied to all wordlines, then reliability improves at corner temperatures, but programming and read time increase overall
Solution Approach 1:
The patent applies adaptive time sense parameters selectively only to wordlines that exhibit significant RWB degradation at corner temperatures, rather than uniformly to all wordlines. This localized approach ensures that time extension is applied only where necessary to maintain reliability, avoiding unnecessary time overhead for wordlines that do not require it.
Solution Approach 2:
The system applies adaptive parameters partially - only to the subset of wordlines that need it at corner temperatures. This partial application prevents excessive time extension across the entire memory array while still providing adequate protection for the critical wordlines that experience RWB degradation.
3Reliability
If higher overdrive voltage is applied to all wordlines at corner temperatures, then reliability improves, but energy consumption increases
Solution Approach 1:
The patent applies higher overdrive voltage selectively to wordlines with significant RWB limitations at corner temperatures, rather than uniformly across all wordlines. This localized voltage adjustment ensures that energy is consumed only where necessary to maintain bit error rates at acceptable levels, avoiding unnecessary energy expenditure for wordlines that do not require enhanced voltage.
Data Source
AI summary
A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.


