Wrap-Around Gate Structure for Scaled Channel Control
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Solution Overview
Problem
As semiconductor devices continue to reduce minimum feature sizes for increased integration density, challenges arise in achieving effective control of channel regions by gate electrodes, affecting device performance.
Innovation Solution
The use of appropriate materials for dummy gates and dielectric spacers in semiconductor devices, such as nano-FETs and fin-FETs, allows for improved control of channel regions through precise patterning and epitaxial growth of source/drain regions, enhancing the performance of these devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but control of channel regions by gate electrodes deteriorates
Solution Approach 1:
The patent transitions from planar gate control to three-dimensional wrap-around gate structures that envelop the channel region from multiple directions. This dimensional change allows effective control of scaled-down channel regions by extending the gate's influence into vertical and lateral dimensions, overcoming the limitations of reduced minimum feature sizes while maintaining integration density.
Solution Approach 2:
The gate electrode is designed to wrap around and nest within the channel region, with the gate structure containing the channel in a confined geometry. This nesting arrangement enhances the gate's control over the channel region by placing the controlling element in direct proximity from multiple sides, effectively addressing the control deterioration issue at scaled dimensions.
2Volume of moving object
If minimum feature sizes are reduced for higher integration density, then device miniaturization is achieved, but device performance deteriorates due to poor channel control
Solution Approach 1:
By implementing wrap-around gate structures that extend into the vertical dimension and wrap laterally, the patent maintains strong electrostatic control over miniaturized channel regions. This three-dimensional gate configuration compensates for the reduced device size by increasing the gate-to-channel interaction surface area, thereby preserving device performance despite miniaturization.
Solution Approach 2:
The patent employs composite material structures in the gate electrode and channel region, utilizing materials with different electrical and physical properties to optimize control. The combination of conductive gate materials and semiconducting channel materials, along with insulating spacers, creates a composite structure that enhances control efficiency while maintaining small device dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the performance of semiconductor devices by providing better control over channel regions, leading to enhanced operational efficiency and reliability.
Implementation Method 1
a dielectric spacer on a first side and a second side of the gate structure in a top-down view, wherein the first side opposes the second side, and wherein a first portion of the dielectric spacer extends between the first channel region and the second channel region
Implementation Method 2
gate structure, wherein the gate structure is on one or more sidewalls of the first channel region and on one or more sidewalls of the second channel region
Data Source
AI summary
A semiconductor device and the method of forming the same are provided. The semiconductor device may include a substrate, a first channel region and a second channel region over the substrate, a gate structure on one or more sidewalls of the first channel region and on one or more sidewalls of the second channel region, and a dielectric spacer on a first side and a second side of the gate structure in a top-down view. The first side opposes the second side. A first portion of the dielectric spacer may extend between the first channel region and the second channel region.