Wrap-around Gate Structures for Semiconductor Leakage Control
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Solution Overview
Problem
Conventional semiconductor gate structures with gates on only one side of the channel structure limit drive currents and current conductance, allowing significant leakage currents due to incomplete control over the channel region.
Innovation Solution
A semiconductor device with a gate-all-around structure where two independently controllable gate structures surround the channel structure on all four sides, enhancing control and reducing leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a single-sided gate structure is used, then the device complexity is reduced, but the drive current and current conductance are limited
Solution Approach 1:
The gate structure is segmented into multiple independent gates positioned at different sides of the channel region. Each gate can be independently controlled to provide optimal voltage for driving current through the channel, thereby increasing overall drive current while maintaining manageable complexity through modular design
Solution Approach 2:
The gate structure transitions from a single-sided (one-dimensional control) to multi-sided or all-around configuration (multi-dimensional control). This spatial expansion allows gates to control the channel region from multiple directions, enhancing current conductance through the channel while distributing the control function across multiple elements
2Reliability
If a single-sided gate structure is used, then the manufacturing process is simplified, but leakage currents increase
Solution Approach 1:
The gate structure is divided into multiple independent gates that can be fabricated using standard semiconductor processing techniques. Each gate segment can be formed, positioned, and connected independently, allowing leakage control through multiple access points while using conventional manufacturing processes
Solution Approach 2:
Different regions of the channel structure are controlled by separate gates positioned at specific locations. This allows local optimization where each gate can be tailored to control leakage in its specific region, with gates positioned to provide targeted control over different portions of the channel
3Reliability
If a multi-sided gate structure is implemented, then control over the channel region is enhanced, but the device complexity increases
Solution Approach 1:
The gate structure is segmented into multiple independent gates positioned at different sides of the channel region. Each gate can be independently controlled to provide optimal voltage for driving current through the channel, thereby increasing overall drive current while maintaining manageable complexity through modular design
Solution Approach 2:
The gate structure transitions from a single-sided (one-dimensional control) to multi-sided or all-around configuration (multi-dimensional control). This spatial expansion allows gates to control the channel region from multiple directions, enhancing current conductance through the channel while distributing the control function across multiple elements
Data Source
AI summary
A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.