Memory Write Driver Power Gating for Short-Circuit Isolation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Semiconductor devices face issues with unnecessary power consumption and short circuit currents during power-down modes, particularly in portable devices with limited power supplies.

Innovation Solution

The semiconductor device incorporates a first and second power gating structure, with a third circuit to isolate the second circuit during a particular period, using a header-only and zigzag type of power gating structures to manage voltage levels and prevent short circuits, and includes an isolation control circuit to manage power gating elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If power gating structures are used to minimize standby power consumption, then power consumption is reduced, but short circuit currents may occur during power-down mode transitions

Engineering Contradiction:

Improvestandby power consumptionVSAvoidshort circuit current

Core Design Contradiction:

Loss of energyVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a third circuit as an intermediary between the first and second circuits. This isolation circuit acts as a mediator that prevents direct interaction between the two circuits during power-down mode, thereby blocking the propagation of short circuit currents while maintaining the power gating functionality for reducing standby power consumption.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent divides the power gating functionality into separate circuits with different power gating structures. The first circuit has a first power gating structure, the second circuit has a second power gating structure, and the third circuit provides isolation. This segmentation allows each circuit to be optimized independently and prevents harmful interactions between them during mode transitions.

Inventive Principle:

Principle #1Segmentation

2Object-affected harmful factors

If different power gating structures are used in different circuits, then short circuit currents are prevented, but device complexity increases

Engineering Contradiction:

Improveshort circuit current preventionVSAvoidcircuit structure complexity

Core Design Contradiction:

Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent applies different power gating structures to different circuits based on their specific requirements. The first circuit uses a first power gating structure optimized for its function, while the second circuit uses a second power gating structure suited to its needs. This local optimization allows each circuit to have the appropriate complexity only where necessary, rather than uniformly increasing complexity across the entire system.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS12537524B2Semiconductor memory device including write driver with power gating structures and operating method thereof

Publication Date: 2026.01.27 SK HYNIX INC

AI summary

A semiconductor device includes a first circuit having a first power gating structure, a second circuit, and a third circuit having a second power gating structure that is different from the first power gating structure, and suitable for isolating the second circuit from the first circuit during a particular period.