Memory Read Voltage Compensation Across Write-Read Temperatures
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Solution Overview
Problem
Cross-temperature effects in memory devices cause bit flip errors and reduced data retention due to shifts in threshold voltage levels, leading to increased error rates and latency in read operations, which existing compensation methods fail to adequately address.
Innovation Solution
The memory device stores the write temperature along with the data and uses this information to adjust read voltage offsets based on the cross-temperature difference, reducing the need for excessive error correction operations and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If temperature compensation is not applied, then device complexity is reduced, but error rate increases due to threshold voltage shifts
Solution Approach 1:
The patent applies preliminary action by storing the write temperature alongside data during the write operation. This temperature information is preserved and later used during read operations to determine appropriate read voltage offsets, eliminating the need for complex real-time temperature sensing and compensation circuits.
Solution Approach 2:
The patent uses copying by storing a copy of the write temperature value in the memory device. This temperature copy is then referenced during read operations to select appropriate read voltage offsets, avoiding the need for complex temperature sensing hardware and simplifying the overall device architecture.
2Reliability
If traditional error correction operations are used, then error rates are reduced, but latency increases due to excessive correction cycles
Solution Approach 1:
The patent applies preliminary action by pre-determining the appropriate read voltage offset based on stored temperature information before the actual read operation. This allows the system to use optimized read voltages from the start, reducing or eliminating the need for multiple error correction cycles and thereby reducing read latency.
Solution Approach 2:
The patent implements feedback by using stored temperature information to dynamically select read voltage offsets. This feedback mechanism allows the system to adapt read operations to temperature conditions without requiring complex real-time sensing, reducing error rates while maintaining low latency through intelligent voltage selection.
3Stability of the object's composition
If read voltage offsets are not adjusted for temperature, then device complexity is minimized, but data retention deteriorates under varying temperature conditions
Solution Approach 1:
The patent applies preliminary action by capturing and storing the write temperature at the time of data programming. This temperature information is preserved with the data and later used to select appropriate read voltage offsets, ensuring stable data retrieval across varying temperature conditions without requiring complex real-time temperature compensation circuits.
Data Source
AI summary
Control logic in a memory device receives, from a requestor, a request to read data from the memory array, the request comprising an indication of a segment of the memory array where the data is stored and performs, using previously configured read operation parameters, a first read operation to read the data and a write temperature associated with the data from the memory array. The control logic determines whether the previously configured read operation parameters satisfy a temperature criterion and responsive to determining that the previously configured read operation parameters do not satisfy the temperature criterion, configures the memory device with updated read operation parameters, and performs, using the updated read operation parameters, a second read operation to read the data from the memory array.