Wustite Oxide Layer MR Ratio Enhancement
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Solution Overview
Problem
Current magneto-resistance effect elements in magnetic recording and reproducing apparatuses have limitations in achieving high sensitivity and high-density magnetic memory due to suboptimal magneto-resistance ratios (MR ratios).
Innovation Solution
Incorporating a magneto-resistance effect element with a specific configuration that includes a first and second electrode, a first and second magnetic layer, and an oxide layer of wustite crystal grains with a (1 1 1) plane orientation containing iron, where the lattice spacing of the (1 1 1) plane is between 0.253 nanometers and 0.275 nanometers, enhancing spin-dependent scattering and improving the MR ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional magneto-resistance effect elements are used, then device complexity is reduced, but MR ratio is insufficient for high sensitivity and high-density applications
Solution Approach 1:
The patent applies parameter changes by precisely controlling the lattice spacing of the oxide layer between 0.253 nm and 0.275 nm, and by controlling the thickness of each layer (oxide layer: 0.3-3 nm, magnetic layers: 1-10 nm). This optimization of physical parameters achieves high MR ratio without requiring complex device structures
Solution Approach 2:
The patent uses composite material structure consisting of magnetic layers (CoFeB, CoFe, CoNbO3) combined with an oxide layer having specific crystal structure. The interface between these different materials creates spin-dependent scattering that enhances MR ratio while maintaining relatively simple device architecture
2Measurement precision
If oxide layer with smaller lattice spacing is used, then manufacturing precision is easier to achieve, but spin-dependent scattering is reduced and MR ratio decreases
Solution Approach 1:
The patent identifies and optimizes the critical parameter of lattice spacing, setting it within the specific range of 0.253-0.275 nm. This parameter optimization enables high MR ratio while remaining compatible with conventional manufacturing capabilities, as it represents a moderate deviation from standard oxide lattice constants that can be achieved through controlled oxidation processes
Solution Approach 2:
The patent applies local quality by creating specific crystallographic orientation ((111) plane) in the oxide layer and controlling the local atomic arrangement at the interface between oxide and magnetic layers. This local structural optimization enhances spin-dependent scattering at the interface without requiring global structural changes
3Quantity of substance
If high-density magnetic memory is implemented, then storage capacity increases, but sensitivity requirements become more stringent
Solution Approach 1:
The patent optimizes thickness parameters of all layers to achieve high MR ratio in compact structures. By controlling oxide layer thickness (0.3-3 nm) and magnetic layer thickness (1-10 nm), the invention achieves both high storage density and high sensitivity for detecting magnetic states in high-density memory cells
Solution Approach 2:
The composite material structure with optimized interfaces provides enhanced spin-dependent scattering that delivers high MR ratio signals, enabling sensitive detection of magnetic states even in miniaturized high-density memory configurations where signal strength is naturally reduced
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly enhances the MR ratio, leading to improved sensitivity and high-density magnetic memory capabilities by increasing spin-dependent scattering and maintaining a stable resistance area, thereby addressing the limitations of existing technologies.
Implementation Method 1
enhancing spin-dependent scattering and improving the MR ratio
Implementation Method 2
magneto-resistance effect element
Data Source
AI summary
According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.