XBAR Piezoelectric Diaphragm Resonator for Wideband RF Filtering

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Solution Overview

Problem

Current RF filters, including SAW and BAW resonators, are not well-suited for higher frequencies and wider bandwidths required by future communication networks, such as 5G NR standards, which demand improved performance in handling higher transmit power and wider communication channel bandwidths.

Innovation Solution

The Transversely-Excited Film Bulk Acoustic Resonator (XBAR) structure, featuring a piezoelectric diaphragm supported by a piezoelectric substrate, utilizes an interdigital transducer to excite shear primary acoustic waves, offering high electromechanical coupling and frequency capability, suitable for frequencies above 3 GHz.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional SAW and BAW resonators are used, then existing RF filter performance is maintained, but they cannot handle higher frequencies and wider bandwidths required by future communication networks

Engineering Contradiction:
Improvefrequency capabilityVSAvoidperformance at higher frequencies
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes the fundamental operating parameters of the resonator by transitioning from longitudinal wave modes in conventional BAW resonators to shear horizontal wave modes in XBAR resonators. This parameter change enables operation at higher frequencies (above 3 GHz) with improved bandwidth capability, directly addressing the limitation of conventional resonators at higher frequency ranges.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention employs a composite structure consisting of a piezoelectric film layer bonded to a piezoelectric substrate, forming an XBAR resonator. This composite material approach combines the advantages of thin-film piezoelectric materials for frequency control with substrate materials providing mechanical support and thermal management, enabling reliable high-frequency operation.

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If conventional BAW resonators are used, then existing device structure is maintained, but electromechanical coupling is insufficient for wide bandwidth applications

Engineering Contradiction:
ImprovebandwidthVSAvoidelectromechanical coupling
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The XBAR resonator utilizes shear horizontal mechanical vibrations in the piezoelectric film, excited by interdigital transducers. This mechanical vibration mode provides superior electromechanical coupling compared to conventional BAW resonators, enabling wider bandwidth operation and better signal processing efficiency in RF filter applications.

Inventive Principle:
Principle #18Mechanical vibration

Solution Approach 2:

The invention replaces the traditional longitudinal acoustic wave mechanism in BAW resonators with a shear horizontal wave mechanism in XBAR resonators. This substitution of the acoustic wave type and propagation mode enables improved electromechanical coupling and wider bandwidth performance while maintaining the basic resonator function.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Productivity

If RF filters are designed for higher frequencies, then future communication network requirements are met, but existing resonator technologies cannot achieve the required performance

Engineering Contradiction:
Improvecommunication bandwidth handlingVSAvoidresonator fabrication at high frequency
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The XBAR resonator structure segments the piezoelectric material into a thin film layer deposited on a separate substrate. This segmentation allows independent optimization of the film thickness for frequency control and the substrate properties for mechanical support, facilitating precise manufacturing at high frequencies through established thin-film deposition techniques.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The piezoelectric substrate acts as an intermediary between the thin piezoelectric film and the mounting structure. This intermediary provides mechanical support, thermal management, and stress relief, enabling precise fabrication and reliable operation of high-frequency resonators by decoupling the frequency-determining film from the structural requirements.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

XBAR resonators provide enhanced performance in RF filters, enabling better handling of high-frequency and wide-bandwidth communications by achieving high piezoelectric coupling and improved bandwidth, addressing the limitations of existing technologies.

Implementation Method 1

The XBAR resonator comprises an interdigital transducer (IDT) formed on a thin floating layer, or diaphragm, of a single-crystal piezoelectric material. A microwave signal applied to the IDT excites a shear primary acoustic wave in the piezoelectric diaphragm.

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentUS11817845B2Method for making transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate
Publication Date: 2023.11.14 MURATA MFG CO LTD
  • US11817845B2 patent drawing
  • US11817845B2 patent drawing
  • US11817845B2 patent drawing

AI summary

Methods of making acoustic resonators and filter devices. A method includes attaching a piezoelectric plate to a substrate, and forming a conductor pattern including an interdigital transducer (IDT) on a portion of the piezoelectric plate that forms a diaphragm spanning a cavity such that interleaved fingers of the IDT are on the diaphragm. The substrate and the piezoelectric plate are the same material.