Symmetric XBAR Resonator Layout for Wideband RF Filtering

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Solution Overview

Problem

Current RF filters using acoustic wave resonators are not well-suited for higher frequency communications bands above 3 GHz, such as those proposed for future wireless networks, due to limitations in performance and design trade-offs.

Innovation Solution

The development of transversely-excited film bulk acoustic resonators (XBARs) with a symmetric structure, featuring interleaved IDT fingers on both sides of a piezoelectric diaphragm and dielectric layers, which excite shear-mode acoustic waves, enhancing piezoelectric coupling and reducing spurious modes for improved high-frequency filter performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional acoustic wave resonators are used for high-frequency filters, then existing technology can be maintained, but performance and bandwidth are insufficient for frequencies above 3 GHz

Engineering Contradiction:
Improvefilter performanceVSAvoidbandwidth
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The resonator structure is segmented into distinct functional layers including piezoelectric layers, dielectric layers, and electrode fingers arranged in specific patterns. This segmentation allows optimization of each layer's properties for high-frequency operation while maintaining overall device performance

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes key parameters including using shear-mode acoustic waves instead of longitudinal modes, employing specific piezoelectric material compositions, and adjusting layer thicknesses to achieve resonant frequencies above 3 GHz with improved bandwidth and reduced spurious modes

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If transverse excitation is used to enhance piezoelectric coupling, then coupling efficiency improves, but spurious modes are generated

Engineering Contradiction:
Improvepiezoelectric couplingVSAvoidspurious modes
Core Design Contradiction:
Use of energy by moving objectVSObject-generated harmful factors

Solution Approach 1:

The resonator employs asymmetric electrode finger arrangements and non-uniform dielectric layer thicknesses to create specific stress distributions that enhance shear-mode coupling while suppressing the generation of spurious acoustic modes through controlled asymmetry in the excitation field

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The invention converts the potentially harmful spurious modes generated by transverse excitation into beneficial effects by using specific layer configurations and material properties that cause these modes to cancel each other out or be converted into useful harmonic frequencies that enhance the desired response

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Object-generated harmful factors

If symmetric structure with interleaved IDT fingers is implemented, then spurious modes are reduced, but device complexity increases

Engineering Contradiction:
Improvespurious modesVSAvoidstructure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The resonator uses replicated finger patterns and symmetric layer configurations that can be manufactured using standard photolithography copying processes, reducing the actual manufacturing complexity despite the appearance of structural symmetry

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The symmetric structure serves multiple functions simultaneously: it reduces spurious modes through symmetry, provides mechanical support, establishes electrical connections, and defines the acoustic boundary conditions, thereby managing complexity through multi-functionality

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

XBARs provide better performance and bandwidth for high-frequency filters, enabling the design of microwave and millimeter-wave filters with increased bandwidth and reduced spurious content, addressing the limitations of existing technologies for future communication systems.

Implementation Method 1

A portion of the piezoelectric plate forms a diaphragm spanning a cavity in the substrate. Interleaved interdigital transducer (IDT) fingers are formed on a front surface of the diaphragm

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

featuring interleaved IDT fingers on both sides of a piezoelectric diaphragm and dielectric layers, which excite shear-mode acoustic waves, enhancing piezoelectric coupling

Methodology Applied
Scientific EffectShear-mode acoustic wave excitation: Vibration

Implementation Method 3

XBARs provide better performance and bandwidth for high-frequency filters, enabling the design of microwave and millimeter-wave filters with increased bandwidth and reduced spurious content

Methodology Applied
Scientific EffectResonance: Resonance

Data Source

PatentUS11349450B2Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes
Publication Date: 2022.05.31 MURATA MFG CO LTD
  • US11349450B2 patent drawing
  • US11349450B2 patent drawing
  • US11349450B2 patent drawing

AI summary

Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate. A back surface of the piezoelectric plate is attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern including an interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm. A front-side dielectric layer is formed on the front surface of the piezoelectric plate between, but not over, the IDT fingers. A back-side dielectric layer is formed on a back surface of the diaphragm. Thicknesses of the IDT fingers and the front-side dielectric layer are substantially equal. An acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.