Multi-Pitch XBAR Resonator for 5G Spurious Mode Suppression

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Solution Overview

Problem

Current RF filters using acoustic wave resonators are not well-suited for higher frequencies and bandwidths required in future communications networks, particularly for 5G NR standards, which demand bandpass filters capable of handling higher transmit power and wider communication channel bandwidths.

Innovation Solution

The use of a Transversely-Excited Film Bulk Acoustic Resonator (XBAR) with a multi-pitch interdigital transducer (IDT) design, which excites a shear primary acoustic wave in a piezoelectric diaphragm, providing high electromechanical coupling and frequency capability, and effectively reduces spurious modes by varying the pitch along the length of the IDT.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional acoustic wave resonators are used, then existing filter designs can be maintained, but they cannot handle higher frequencies and bandwidths required for 5G NR standards

Engineering Contradiction:
Improvefrequency capabilityVSAvoidperformance at higher frequencies
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes the fundamental operating parameters of the resonator by transitioning from longitudinal acoustic waves to transverse shear waves, enabling operation at higher frequencies (3 GHz to 100 GHz) while maintaining performance reliability through the unique properties of shear wave propagation in thin film piezoelectric layers

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If single-pitch IDT is used, then manufacturing is simpler, but spurious modes cannot be effectively suppressed

Engineering Contradiction:
Improvespurious modesVSAvoidIDT pitch structure
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The IDT is segmented into multiple regions with different pitch values, where each region generates acoustic waves at different frequencies. This segmentation causes spurious modes from different regions to occur at different frequencies, allowing them to be suppressed through destructive interference while maintaining a relatively simple overall IDT structure

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the IDT are assigned different local pitch characteristics to optimize performance at specific frequency ranges. The first region has a first pitch for generating primary acoustic waves, while the second region has a second pitch for suppressing spurious modes, with each region's pitch optimized for its specific function

Inventive Principle:
Principle #3Local quality

3Power

If higher transmit power is handled, then 5G NR standards are met, but existing resonators lack the power handling capability

Engineering Contradiction:
Improvetransmit power handlingVSAvoidpower handling capability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The resonator design changes the acoustic wave mode from longitudinal to transverse shear waves, which have different propagation characteristics and higher power handling capability. This parameter change enables the device to reliably handle the higher transmit power levels required by 5G NR standards

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The XBAR with a multi-pitch IDT achieves reduced spurious modes and improved filter performance, allowing for effective operation in higher frequency bands, such as those defined by the 5G NR standard, with enhanced power handling and bandwidth capabilities.

Implementation Method 1

The IDT includes a first set of parallel fingers, extending from a first busbar and a second set of parallel fingers extending from a second busbar. The first and second sets of parallel fingers are interleaved. A microwave signal applied to the IDT excites a shear primary acoustic wave in the piezoelectric diaphragm.

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

Transversely-Excited Film Bulk Acoustic Resonator (XBAR) with a multi-pitch interdigital transducer (IDT) design, which excites a shear primary acoustic wave in a piezoelectric diaphragm

Methodology Applied
Scientific EffectAcoustic resonance: Resonance

Data Source

PatentUS11418167B2Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer
Publication Date: 2022.08.16 MURATA MFG CO LTD
  • US11418167B2 patent drawing
  • US11418167B2 patent drawing
  • US11418167B2 patent drawing

AI summary

There are disclosed acoustic resonators and methods of fabricating acoustic resonators. An acoustic resonator includes a piezoelectric plate having front and back surfaces, the back surface facing a substrate. A portion of the piezoelectric plate forms a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes a multi-pitch interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm.