XBAR Resonator Layout With Thick IDT Fingers for High-Power RF Filtering

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Solution Overview

Problem

Current RF filters, particularly those using acoustic wave resonators, are not well-suited for high-frequency communications networks, such as 5G NR, which require bandpass filters capable of handling higher transmit power and wider communication channel bandwidths, especially in frequency ranges like 3300 MHz to 4200 MHz and 4400 MHz to 5000 MHz, and millimeter wave frequencies between 24.25 GHz and 40 GHz.

Innovation Solution

The development of transversely-excited film bulk acoustic resonators (XBARs) using Z-cut lithium niobate or lithium tantalate piezoelectric plates, with specific IDT finger geometries and dielectric layers, to create band-pass filters that can effectively handle high power and wide bandwidths, incorporating a unique acoustic mode that minimizes viscous losses and maximizes piezoelectric coupling for improved performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional acoustic wave resonators are used, then the filter structure is simple and easy to manufacture, but the power handling capability and bandwidth are insufficient for high-frequency communications

Engineering Contradiction:
Improvepower handling capabilityVSAvoidresonator structure complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The resonator is divided into multiple functional layers: piezoelectric layer, acoustic matching layer, and electrode structures. This segmentation allows each layer to be optimized for specific functions (piezoelectric coupling, acoustic impedance matching, electrical connection), enabling high power handling while maintaining manufacturability through standardized layer deposition processes

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The resonator employs composite material structures including piezoelectric materials (such as PZT, PMN-PT), acoustic matching layers with specific impedance values, and conductive electrodes. This composite approach allows optimization of each material's properties for its specific function, achieving high power capability and bandwidth while using well-established material deposition techniques

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If the resonator is designed for wider bandwidth, then the communication channel capacity increases, but the power handling capability decreases

Engineering Contradiction:
ImprovebandwidthVSAvoidpower handling capability
Core Design Contradiction:
Adaptability or versatilityVSPower

Solution Approach 1:

The resonator design utilizes parameter optimization including piezoelectric coupling coefficients (k^2 > 0.5), acoustic impedance ratios between layers, and geometric dimensions of the resonator structure. By carefully selecting these parameters, the resonator achieves both wide bandwidth operation and high power handling capability simultaneously

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The resonator supports multiple acoustic modes (fundamental and higher-order modes) that can be dynamically excited depending on the operating frequency requirements. This dynamic mode selection capability allows the resonator to maintain high power handling across different bandwidth conditions by switching between appropriate acoustic modes

Inventive Principle:
Principle #15Dynamics

3Speed

If the resonator operates at higher frequencies for 5G NR, then the communication speed increases, but the power handling and bandwidth capabilities deteriorate

Engineering Contradiction:
Improvecommunication frequencyVSAvoidtransmit power handling
Core Design Contradiction:
SpeedVSPower

Solution Approach 1:

The resonator replaces conventional mechanical/structural high-frequency designs with piezoelectric-based acoustic wave generation. The piezoelectric effect enables efficient energy conversion at high frequencies (3.3-5.0 GHz and millimeter wave bands) while the acoustic matching layers ensure proper impedance transmission, maintaining high power capability despite the high operating frequency

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The resonator employs frequency-independent design parameters including normalized acoustic impedance ratios and scaled geometric proportions. These parameter relationships remain consistent across different frequency bands, allowing the same resonator structure to maintain high power handling capability from 5G NR frequencies up to millimeter wave frequencies

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

XBARs provide high-performance band-pass filters with improved power handling and bandwidth capabilities, enabling efficient transmission and rejection of desired and undesired frequency bands, thus addressing the limitations of existing RF filters in high-frequency communications.

Implementation Method 1

A radio frequency or microwave signal applied between the two busbars of the IDT excites a primary acoustic mode within the piezoelectric plate

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

excites a primary acoustic mode within the piezoelectric plate

Methodology Applied
Scientific EffectAcoustic resonance: Resonance

Data Source

PatentUS11114998B2Transversely-excited film bulk acoustic resonators for high power applications
Publication Date: 2021.09.07 MURATA MFG CO LTD
  • US11114998B2 patent drawing
  • US11114998B2 patent drawing
  • US11114998B2 patent drawing

AI summary

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a Z-cut piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the diaphragm.