Non-elongated xMR Sensor Structure for Angle Accuracy
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Solution Overview
Problem
Magnetoresistive IC angle sensors face limitations due to magnetic anisotropy and hysteresis effects, particularly at the edge regions, leading to accuracy issues and increased chip size and cost when attempting to reduce anisotropy effects.
Innovation Solution
The development of non-elongated xMR structures with strategically placed contact regions to induce non-homogeneous current directions and densities, reducing shape anisotropy and enhancing specific resistance, thereby minimizing angle errors and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If wider AMR stripes are used to reduce shape anisotropy, then magnetic anisotropy effects are reduced, but chip size increases
Solution Approach 1:
The patent changes the geometric parameters of the xMR structure by using non-elongated shapes with specific aspect ratios and strategic contact region placements. This modifies the current density distribution and magnetic field patterns, reducing shape anisotropy effects without requiring increased chip area, thereby resolving the contradiction between measurement precision and chip size
Solution Approach 2:
The patent applies local quality by creating non-uniform current density distributions through strategically placed contact regions on the non-elongated structure. Different regions of the xMR structure experience different current densities, which optimizes the magnetic sensing performance locally while maintaining overall compact dimensions, thus improving angle accuracy without increasing chip size
2Measurement precision
If wider strips are used to reduce anisotropy effects, then angle errors are reduced, but chip size and cost increase
Solution Approach 1:
The patent modifies structural parameters by employing non-elongated xMR structures with optimized contact region geometries and positions. This changes the electromagnetic field distribution and reduces anisotropy effects, achieving lower angle errors without requiring wider strips that would increase manufacturing complexity and cost
3Measurement precision
If non-elongated structures with non-homogeneous current distribution are used, then shape anisotropy is reduced and specific resistance increases, but structure complexity increases
Solution Approach 1:
The patent implements local quality through non-uniform contact region placements on the non-elongated structure, creating targeted current density variations in specific areas. This local optimization reduces shape anisotropy and enhances specific resistance without requiring complex overall structural designs, thereby improving accuracy while maintaining manufacturing simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces angle errors and hysteresis effects while maintaining sensor accuracy and reducing power consumption, achieved through tailored contact designs and configurations that modify current distributions without increasing chip size.
Implementation Method 1
Magnetoresistive sensors can include anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), tunnel magnetoresistive (TMR) and other technologies, referred to collectively as xMR technologies
Implementation Method 2
Key influencing factors are magnetic domains near the structure edge because the shape anisotropy caused by the demagnetizing field is strongest near the edge
Implementation Method 3
defects at the edge related to the etch process can act as pinning centers that potentially lead to domain generation responsible for hysteresis effects
Data Source
AI summary
Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.