X-ray Detector BJT for Semiconductor Memory Dosage Monitoring

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

As semiconductor process technology advances, the damage from X-ray inspection during the manufacture and assembly of semiconductor memory devices increases, making it difficult to quantify the X-ray dosage effectively.

Innovation Solution

A semiconductor memory device incorporating an X-ray detector with a bipolar junction transistor (BJT) that generates a test result signal based on the voltage change between its input and output ends, allowing for the cumulative X-ray dosage to be monitored and quantified, thereby determining device defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If X-ray inspection is performed during manufacture and assembly of semiconductor memory devices, then defects can be detected, but cumulative X-ray dosage causes damage to the devices and makes quantification difficult

Engineering Contradiction:

Improvedefect detection capabilityVSAvoidX-ray damage to semiconductor device

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful effect of X-ray radiation into a useful measurement signal by utilizing the phenomenon that X-ray dosage causes measurable voltage changes in a BJT. The detector circuit measures the voltage change between collector and emitter of the BJT, which is directly proportional to cumulative X-ray exposure, thereby transforming the harmful radiation effect into a quantifiable metric for process control and defect analysis

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces a bipolar junction transistor (BJT) as an intermediary element that mediates between the X-ray radiation and the measurement system. The BJT acts as a transducer that converts invisible X-ray dosage into a measurable electrical voltage signal, enabling indirect measurement of cumulative X-ray exposure without requiring direct radiation detection equipment

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If wiring width and chip thickness are decreased to advance semiconductor process technology, then device performance is improved, but susceptibility to X-ray damage increases

Engineering Contradiction:

Improvewiring width and chip thicknessVSAvoidX-ray damage susceptibility

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent replaces physical inspection methods with an electrical measurement system. Instead of using mechanical or optical inspection techniques that require physical access and contact, the invention uses an electrical circuit (BJT-based voltage measurement) to detect and quantify X-ray exposure effects, providing a non-contact, integrated measurement approach that works seamlessly with advanced miniaturized device structures

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables efficient quantification and monitoring of X-ray dosage, facilitating the detection of defects in semiconductor memory devices and improving manufacturing efficiency by determining device integrity through voltage changes in the BJT.

Implementation Method 1

a bipolar junction transistor (BJT) in which a voltage between an input end and an output end changes according to a cumulative X-ray dosage to the semiconductor memory device

Methodology Applied

Scientific EffectX-ray radiation effect on semiconductor voltage: X-Ray

Data Source

PatentUS10984853B2X-ray detector, semiconductor memory device including the same, method of testing semiconductor memory device and method of manufacturing semiconductor memory device

Publication Date: 2021.04.20 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor memory device includes a first data input/output (I/O) pad, an X-ray detector and a second data I/O pad. The first data I/O pad receives a test signal. The X-ray detector is connected to the first data I/O pad, includes a bipolar junction transistor (BJT) in which a voltage between an input end and an output end changes according to a cumulative X-ray dosage to the semiconductor memory device, and generates a test result signal indicating the voltage between the input and output ends of the BJT based on the test signal. The second data I/O pad is connected to the X-ray detector and outputs the test result signal.