X-ray detector panel with high band gap insulating layer
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Solution Overview
Problem
Existing X-ray detectors, particularly indirect flat panel types, face issues with moisture permeation and current leakage due to the use of organic interlayer insulating layers, which can lead to failure in forming accurate X-ray images.
Innovation Solution
The X-ray detector panel employs a substrate with a transistor and PIN diode configuration, utilizing an interlayer insulating layer with a high band gap energy (8-10 eV) to prevent moisture permeation and leakage, and a passivation layer with a silicon nitride layer to further suppress current leakage, along with a silicon oxynitride and silicon oxide layer stack for improved barrier characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If organic interlayer insulating layers are used in indirect FP X-ray detectors, then ease of manufacture is improved, but moisture permeation and current leakage occur
Solution Approach 1:
The patent changes the key parameter of the interlayer insulating layer from organic material to inorganic material with high band gap energy (8-10 eV). This parameter change fundamentally alters the material's properties, providing both moisture barrier functionality and electrical insulation, thereby resolving the contradiction between ease of manufacture and reliability by eliminating moisture permeation and current leakage issues inherent in organic materials
Solution Approach 2:
The patent employs a composite structure consisting of multiple inorganic layers including silicon oxide layer, silicon oxynitride layer, and silicon nitride layer. Each layer contributes specific properties: silicon oxide provides moisture barrier, silicon oxynitride provides electrical insulation, and silicon nitride provides additional protection. This composite material approach achieves both manufacturability and high reliability
2Ease of manufacture
If conventional insulating materials with lower band gap energy are used, then ease of manufacture is improved, but current leakage from PIN diode increases
Solution Approach 1:
The patent fundamentally changes the band gap energy parameter of the interlayer insulating layer to a high value range of 8-10 eV. This parameter change creates an effective energy barrier that prevents electron tunneling and current leakage from the PIN diode, while still allowing for standard semiconductor manufacturing processes to be used
3Device complexity
If thin interlayer insulating layers are used, then device complexity is reduced, but moisture permeation increases
Solution Approach 1:
The patent uses a composite structure of multiple thin inorganic layers (silicon oxide, silicon oxynitride, silicon nitride) where each layer is relatively thin individually but collectively provides excellent moisture barrier properties. The composite structure achieves effective moisture protection without requiring a single thick layer, thus maintaining device simplicity while preventing moisture permeation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents moisture permeation and suppresses current leakage, ensuring reliable X-ray detection and image formation by reducing data line noise and maintaining image quality.
Implementation Method 1
an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy of about 8 eV to about 10 eV
Implementation Method 2
a passivation layer disposed on the data line, the bias line, and the interlayer insulating layer
Implementation Method 3
a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer
Data Source
AI summary
An X-ray detector panel comprises: a substrate; a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other; a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer; an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy of about 8 eV to about 10 eV; a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer; a bias line disposed on the interlayer insulating layer and contacting the second electrode of the photodiode via the interlayer insulating layer; and a passivation layer disposed on the data line, the bias line, and the interlayer insulating layer.