X-Ray Detector Shielding Layout for Transistor Radiation Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing X-RAY detectors suffer from reduced service life due to insufficient radiation shielding for the transistor, which leads to transistor failure under accumulated radiation.
Innovation Solution
The X-RAY detector incorporates a radiation shielding structure at the light-entering side of each detection unit, ensuring that the orthogonal projection of the shielding structure covers the switching transistor, thereby providing effective radiation shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the light conversion element and transistor are arranged in each pixel without radiation shielding, then the detector structure is simple and manufacturing is easy, but the transistor fails when radiation accumulates to a certain extent
Solution Approach 1:
A radiation shielding structure is introduced as an intermediary element between the light conversion element and the transistor. This shielding layer blocks radiation from reaching the transistor while allowing the light conversion element to function normally, thereby protecting the transistor without fundamentally changing the overall pixel structure
Solution Approach 2:
The pixel structure is segmented into distinct functional zones: a light conversion element region, a radiation shielding region, and a transistor region. This segmentation allows each component to be optimized independently - the shielding structure can be specifically designed to protect the transistor while minimizing impact on the light conversion element
2Duration of action of stationary object
If radiation shielding structure is added to protect the transistor, then the service life is prolonged, but the device complexity increases
Solution Approach 1:
Radiation shielding is applied locally only where needed - specifically protecting the transistor region - rather than uniformly across the entire detector. This localized approach extends service life by protecting the critical transistor component while minimizing the addition of structural complexity
Solution Approach 2:
The radiation shielding structure is integrated into the layered architecture of the detector, utilizing the vertical dimension between the light conversion element and transistor. This allows protection to be achieved within the existing structural footprint without significantly increasing planar complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly enhances the radiation-resistant performance of the detector, prolonging its service life by protecting the switching transistor from radiation damage.
Implementation Method 1
Each detection unit further includes a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto the base substrate fully covers an orthogonal projection of the switching transistor onto the base substrate
Implementation Method 2
Each detection unit includes a light conversion element for converting an optical signal into an electrical signal
Data Source
AI summary
The present disclosure relates to an X-RAY detector including a base substrate and a plurality of detection units arranged on the base substrate. Each detection unit includes a light conversion element and a switching transistor, the light conversion element is configured to convert an optical signal into an electrical signal, and the switching transistor is configured to output the electrical signal to a reading signal line. Each detection unit further includes a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto the base substrate fully covers an orthogonal projection of the switching transistor onto the base substrate. The present disclosure further relates to a method for forming the X-RAY detector.


