X-ray Flat-Panel Detector Insulating Reflection Layer
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Solution Overview
Problem
The amorphous silicon thin film in X-ray flat-panel detectors experiences photo-degeneration, leading to decreased photoelectric conversion efficiency, and reducing its thickness lowers absorption efficiency, posing a challenge in designing detectors with improved quantum detection efficiency and sensitivity.
Innovation Solution
An X-ray flat-panel detector is designed with an insulating reflection layer made of a white insulating material containing a resin matrix and light-beam diffuse reflection functional material powder, such as titanium dioxide, to reflect penetrating light beams back to the photodiode, enhancing light utilization and detection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the amorphous silicon thin film is decreased to reduce photo-degeneration, then the photo-degeneration effect is reduced, but the absorption efficiency and photoelectric conversion efficiency of the photodiode are lowered
Solution Approach 1:
The patent applies the principle of converting harm into benefit by introducing a reflective layer that captures the harmful effect of light penetration (which would otherwise be lost) and redirects it back to the photodiode. This allows the use of thinner amorphous silicon films (reducing photo-degeneration) while maintaining high light absorption efficiency through the reflection of transmitted light back to the photodiode for a second conversion opportunity.
2Reliability
If the thickness of the amorphous silicon thin film is decreased to reduce photo-degeneration, then the photo-degeneration effect is reduced, but the quantum detection efficiency of the detector is lowered
Solution Approach 1:
The reflective layer converts the harmful light transmission loss into a beneficial second chance for photoelectric conversion. By reflecting transmitted light back to the photodiode, the system maintains high quantum detection efficiency even with thinner films that are more resistant to photo-degeneration.
3Productivity
If a reflective layer is added to improve light absorption, then the quantum detection efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent employs composite materials by combining the amorphous silicon photodiode layer with a reflective layer (such as metal or dielectric materials). This composite structure achieves enhanced light absorption and quantum detection efficiency while managing the added structural complexity through material science approaches rather than mechanical complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly improves the quantum detection efficiency and sensitivity of the detector by effectively increasing the utilization of incident light, with a demonstrated increase in quantum detection efficiency from 40% to 45% compared to detectors without this reflective layer.
Implementation Method 1
an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed
Implementation Method 2
the visible light is converted into an electrical signal via a photodiode
Implementation Method 3
the insulating reflection layer is made of a white insulating material, which contains 80%-98% of a resin matrix and 2%-20% of a light-beam diffuse reflection functional material powder
Data Source
AI summary
The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.