X-ray Diffraction Line Roughness Measurement

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Solution Overview

Problem

Current methods for measuring line roughness in microelectronic and photonic elements, such as scanning electron microscopes and atomic force microscopes, lack the necessary resolution and efficiency, requiring extensive image taking and processing time, while X-ray scattering techniques rely on computational models and multiple iterations.

Innovation Solution

A method involving the acquisition of a single diffraction image of X-rays scattered at small angles, calculating power spectral density, and determining characteristic parameters to measure line width roughness with high resolution and reduced processing time, specifically using the power spectral density to analyze the variation in line width.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If scanning electron microscope is used to measure line roughness, then measurement capability is provided, but resolution is limited to nanometer scale and measurement time is excessive

Engineering Contradiction:
Improveline roughness measurement capabilityVSAvoidimage acquisition and processing time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces the mechanical scanning electron microscope system with an X-ray diffraction system. Instead of using electron beams and mechanical scanning, the invention uses X-ray diffraction patterns to measure line roughness, achieving both higher resolution (0.1 nm) and dramatically reduced measurement time through direct mathematical extraction from diffraction data

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent transitions from real-space imaging (2D images requiring extensive processing) to reciprocal space analysis (diffraction patterns). By measuring in the Fourier domain rather than real space, the invention enables direct calculation of roughness parameters without time-consuming image acquisition and processing steps

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If atomic force microscope is used to measure line roughness, then measurement capability is provided, but image acquisition time is even longer and resolution is limited to nanometer scale

Engineering Contradiction:
Improveline roughness measurement capabilityVSAvoidimage acquisition time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces the mechanical atomic force microscope system with an X-ray diffraction system. Instead of using physical probes and mechanical scanning, the invention uses X-ray diffraction patterns to measure line roughness, achieving both higher resolution (0.1 nm) and dramatically reduced measurement time through direct mathematical extraction from diffraction data

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Measurement precision

If small-angle X-ray scattering with computational models is used, then measurement capability is provided, but processing time is excessive due to multiple iterations

Engineering Contradiction:
Improveline roughness measurement capabilityVSAvoidcomputational processing time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent extracts the essential roughness information directly from the diffraction pattern intensities without requiring full 3D structural modeling. By focusing only on the intensity variations in reciprocal space and applying direct mathematical transformations, the invention eliminates time-consuming iterative modeling while preserving measurement accuracy

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses a simplified mathematical model that directly relates diffraction intensities to roughness parameters through power spectral density analysis. This simplified 'copy' of the full modeling approach provides accurate roughness measurements without requiring the computationally intensive iterative processes of complete structural refinement

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method achieves a resolution of 0.1 nm with significantly reduced time compared to existing methods, providing a direct and precise measurement of line width roughness without the need for three-dimensional modeling or extensive iterations.

Implementation Method 1

acquisition of at least one diffraction image in the reciprocal space of the network of lines obtained by collecting X-rays scattered at small angles

Methodology Applied
Scientific EffectX-ray diffraction: Diffraction

Data Source

PatentEP3617646B1Method for measuring the line roughness of an array of lines by x-ray diffraction
Publication Date: 2022.04.13 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • EP3617646B1 patent drawingFigure 1~2
  • EP3617646B1 patent drawingFigure 3~4
  • EP3617646B1 patent drawingFigure 5~6

AI summary

Method for measuring the line width roughness of a grating of p lines of a sample, p being greater than or equal to 2, said lines having a length l, comprising: a) the acquisition of at least one diffraction image by small-angle X-ray transmission diffraction using an X-ray beam covering p lines of said grating, b) measurement, on the diffraction image, of the intensities along the direction qy, in a cutting plane passing through qx = 0, c) division of said intensities by n and by l, d) plotting of the power spectral density as a function of qy, e) determination from the power spectral density of characteristic parameters of the line width roughness, forming the measure of the line width roughness.