X-Ray Diffraction Thickness Measurement for Thick Metal Layers

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Solution Overview

Problem

Existing methods for measuring the thickness of metal layers in semiconductor devices, such as X-ray fluorescence (XRF), face challenges with reduced sensitivity and reliability as the thickness increases, particularly in high-performance electronic products with advanced integration.

Innovation Solution

An apparatus and method utilizing X-ray diffraction (XRD) to measure the thickness of metal layers by comparing the intensity of X-rays diffracted before and after deposition, using a fixed angle configuration to determine the thickness through the Beer-Lambert law.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If X-ray fluorescence (XRF) is used to measure metal layer thickness, then the measurement process is simple, but measurement sensitivity and reliability decrease as layer thickness increases

Engineering Contradiction:

Improvemeasurement process simplicityVSAvoidmeasurement reliability for thick layers

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the measurement parameter from X-ray fluorescence intensity (XRF) to X-ray diffraction intensity (XRD). By utilizing the diffraction effect instead of fluorescence, the measurement maintains high sensitivity and reliability even for thick metal layers, directly resolving the limitation of XRF method

Inventive Principle:

Principle #35Parameter changes

2Measurement precision

If traditional imaging technologies like TEM or SEM are used, then high resolution images can be obtained, but destructive specimen preparation is required and process time increases

Engineering Contradiction:

Improveimage resolutionVSAvoidspecimen preparation time

Core Design Contradiction:

Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces mechanical specimen preparation methods (cutting, mounting, thinning required for TEM/SEM) with a non-destructive X-ray diffraction measurement approach. The measurement is performed directly on the intact specimen, eliminating time-consuming preparation steps while maintaining measurement accuracy

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces X-ray diffraction as an intermediary measurement method that bridges the gap between non-destructive inspection requirements and the need for accurate thickness measurement. The diffraction pattern serves as the intermediary signal that provides precise thickness information without physical contact or damage to the specimen

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Provides high measurement sensitivity and reliability for thick metal layers, enabling non-destructive inspection of semiconductor devices without the need for destructive specimen preparation.

Implementation Method 1

An apparatus and method utilizing X-ray diffraction (XRD) to measure the thickness of metal layers by comparing the intensity of X-rays diffracted before and after deposition

Methodology Applied

Scientific EffectX-ray diffraction: Bragg Diffraction

Implementation Method 2

measuring a thickness of the metal layer by comparing the first intensity with the second intensity

Methodology Applied

Scientific EffectBeer-Lambert law: Absorption (EM radiation)

Data Source

PatentUS12436122B2Apparatus and method for measuring a layer of a semiconductor device using x-ray diffraction

Publication Date: 2025.10.07 SAMSUNG ELECTRONICS CO LTD

AI summary

An apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate X-rays, a detection unit configured to detect the X-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity of the X-rays diffracted from the specimen.