X-ray Mark Detection Through Opaque Semiconductor Layers
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Solution Overview
Problem
Existing semiconductor device fabrication processes face challenges in clearly imaging alignment marks when these marks are covered by opaque or low-transmissivity layers, as visible light is absorbed or reflected, reducing phase contrast or reflectivity contrast signals.
Innovation Solution
An apparatus and method utilizing an X-ray emitter and detector, with a supporting member to position the semiconductor device on the optical path, allowing X-rays to transmit through and form images of marks, even if covered by opaque or low-transmissivity layers, using an X-ray reflector and optical elements to enhance signal detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If visible light is used to detect alignment marks, then the detection system is simple and cost-effective, but the alignment marks cannot be clearly imaged when covered by opaque or low-transmissivity layers
Solution Approach 1:
The patent changes the detection parameter from visible light wavelength to X-ray wavelength. X-rays have higher energy and can penetrate opaque or low-transmissivity layers that block visible light, enabling clear imaging of alignment marks through multiple layers without increasing system complexity
Solution Approach 2:
The patent substitutes the optical detection system (visible light) with an X-ray detection system. This replacement enables penetration through opaque layers while maintaining a relatively simple detection apparatus structure
2Measurement precision
If X-ray is used to image alignment marks through opaque layers, then clear imaging is achieved, but the device complexity increases
Solution Approach 1:
The patent introduces an X-ray reflector as an intermediary component to manage the X-ray optical path. The reflector directs X-rays onto the alignment marks and guides the reflected X-rays to the detector, enabling clear imaging while keeping the overall system configuration manageable
Solution Approach 2:
The patent utilizes the reflective dimension of X-rays rather than direct transmission. By using an X-ray reflector to bounce X-rays onto the alignment marks and back to the detector, the system achieves penetration through opaque layers while maintaining a compact arrangement
3Reliability
If multiple layers cover the alignment marks, then the semiconductor device structure is complete and functional, but the phase contrast or reflectivity contrast signal is significantly reduced
Solution Approach 1:
The patent changes the electromagnetic radiation parameter from visible light to X-ray. X-rays have sufficient energy to penetrate multiple semiconductor layers without being completely absorbed or reflected, maintaining strong phase contrast and reflectivity contrast signals even when alignment marks are covered by multiple layers
Solution Approach 2:
The patent converts the harmful effect of opaque layers (which block visible light) into a beneficial scenario for X-ray detection. The same layers that obscure visible light detection become transparent to X-rays, allowing alignment mark imaging while maintaining complete device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables clear and accurate imaging of alignment marks, allowing precise alignment between layers, even when covered by opaque or low-transmissivity layers, by leveraging X-ray penetrability and reflectivity differences.
Implementation Method 1
an X-ray emitter for emitting X-ray... an apparatus for detecting a mark in a layer of a semiconductor device... using the X-ray that has been transmitted through the semiconductor device
Implementation Method 2
said supporting member may have an X-ray reflector configurable to reflect the X-ray that has been transmitted through said semiconductor device
Data Source
AI summary
The present invention discloses an apparatus and a method for detecting a mark as well as a semiconductor device processing system. In order to address the problem existing in the prior art that detection of a mark in a layer of a semiconductor device has a low accuracy, the present invention uses an X-ray emitter and an X-ray detector to image the mark contained in the layer of the semiconductor device supported on the supporting member. According to the present invention, due to the use of the X-ray, even if the mark is covered by multiple layers which are opaque to visible light, the mark may be clearly imaged.