X-ray Nano-particle Characterization via Integrated Fluorescence and Scattering
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Solution Overview
Problem
Current methods for characterizing nano-particle layers on substrates lack precision in determining size and distribution characteristics, which is crucial for monitoring deposition processes and ensuring desired packing density and electrical properties in semiconductor wafers.
Innovation Solution
The method involves directing X-rays at a grazing angle onto a nano-particle layer, detecting secondary X-ray radiation, and analyzing the angular spectrum to determine particle size and elemental quantity, thereby characterizing the distribution of nano-particles, including numerical density and fill factor, using a combination of X-ray fluorescence and small-angle X-ray scattering techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional characterization methods are used for nano-particle layers, then the analysis process is simple, but the measurement precision of particle size and distribution is insufficient
Solution Approach 1:
The patent combines X-ray fluorescence (XRF) and small-angle X-ray scattering (SAXS) techniques into a single integrated measurement system. The XRF component provides elemental composition and quantity information, while the SAXS component provides particle size and distribution information. By merging these two complementary techniques, the system achieves comprehensive characterization of nano-particle layers with high measurement precision without requiring multiple separate instruments.
Solution Approach 2:
The measurement system is designed to perform multiple characterization functions simultaneously: it can determine elemental composition, particle size, particle distribution, and packing density all through a single integrated apparatus. This multi-functional capability allows the system to provide comprehensive information about nano-particle layers without requiring specialized separate equipment for each parameter, thereby improving measurement precision while managing device complexity.
2Manufacturing precision
If conventional methods are used, then the device complexity is low, but the manufacturing precision of nano-particle layer characteristics is insufficient
Solution Approach 1:
The integrated XRF/SAXS measurement system provides real-time feedback on nano-particle layer characteristics during the deposition process. By continuously monitoring particle size, distribution, and packing density, the system enables process control adjustments to achieve desired manufacturing precision. The feedback capability allows for in-situ characterization without requiring post-deposition analysis, thereby improving manufacturing precision while managing system complexity through automated control.
3Measurement precision
If detailed characterization of nano-particle distribution is performed, then the measurement precision improves, but the analysis time increases
Solution Approach 1:
The patent enables continuous in-situ characterization of nano-particle layers during the deposition process rather than requiring discrete post-deposition analysis steps. The integrated XRF/SAXS system can continuously monitor particle size, distribution, and packing density as the layer forms, providing continuous feedback that improves measurement precision while eliminating idle time between deposition and characterization steps. This continuous action significantly reduces total analysis time compared to conventional sequential approaches.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for accurate monitoring and control of nano-particle deposition processes, ensuring the desired distribution and packing density, thereby improving the electrical properties and performance of semiconductor devices.
Implementation Method 1
X-ray fluorescence (XRF) measurement, and specifically X-ray microfluorescence (i.e., X-ray fluorescence using narrow, focused excitation beams), is gaining increasing attention as a method for testing semiconductor wafers
Implementation Method 2
Small-angle X-ray scattering (SAXS) is another X-ray based method, which may be used for surface layer characterization
Data Source
AI summary
A method for analyzing a sample includes directing one or more beams of X-rays to impinge on an area of a surface of the sample on which a layer of nano-particles of a selected element has been formed. Secondary X-ray radiation from the area is detected responsively to the one or more beams. A distribution of the nano-particles on the surface is characterized based on the detected radiation.