X-ray Photoelectron Contrast Imaging for Deep Semiconductor Defect Detection
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Solution Overview
Problem
Traditional defect detection methods, such as e-beam and bright/dark field inspection, are limited in their ability to penetrate deeply into semiconductor packages, making it difficult to detect defects beyond the surface layers, especially in advanced semiconductor packaging where active circuit elements are buried deep within the package substrate or stacked chips, exceeding 10 microns in depth.
Innovation Solution
A defect detection and metrology system that utilizes a source controller to control a light emitting device capable of producing spatially coherent light waves, penetrating at least to a first depth, combined with a converter that generates a photoelectron contrast image and a detector that outputs electronic maps, allowing for the detection of defects and metrology of deeply recessed features, including cracks and gaps, using a multilayer device with high absorption properties and anisotropic X-ray and UV light absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional bright field inspection or e-beam wafer inspection is used, then surface defect detection is effective, but deep penetration capability is insufficient
Solution Approach 1:
The patent changes the fundamental parameter of light penetration depth by transitioning from visible light to X-ray radiation. This parameter change enables deep penetration through semiconductor packages while maintaining defect detection capability, resolving the contradiction between surface inspection effectiveness and deep penetration requirement
Solution Approach 2:
The patent replaces the mechanical/optical inspection system (bright field or e-beam microscopy) with an X-ray based inspection system. This substitution fundamentally changes the inspection mechanism from surface-level optical detection to deep-penetration radiographic detection, enabling inspection of buried circuit elements at depths exceeding 10 microns
2Productivity
If advanced semiconductor packaging with deeply buried circuit elements is implemented, then device density and integration are improved, but defect detection capability deteriorates
Solution Approach 1:
The patent applies parameter change by using X-ray radiation with sufficient energy to penetrate the increased package depth associated with advanced semiconductor packaging. This enables defect detection in highly integrated devices with multiple stacked chips and buried interconnects, maintaining detection capability despite increased device density and packaging complexity
Solution Approach 2:
The patent transitions from two-dimensional surface inspection to three-dimensional volumetric inspection capability. X-ray imaging provides depth information and enables detection of defects throughout the entire package volume, not just at the surface, thereby addressing the detection challenges posed by deeply buried circuit elements in high-density packaging
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate detection and measurement of defects and physical properties within semiconductor packages, including cracks and gaps, beyond the surface layers, with high resolution and precision, overcoming the limitations of traditional methods by using spatially coherent light and advanced conversion techniques.
Implementation Method 1
a light emitting device capable of producing spatially coherent light waves, penetrating at least to a first depth
Implementation Method 2
a converter that, based at least in part on light waves that were incident on a device under test, generates a photoelectron contrast image
Implementation Method 3
a multilayer device with high absorption properties and anisotropic X-ray and UV light absorption
Data Source
AI summary
A defect detection and imaging system is presented for performing microscopy and/or spectroscopy on a device under test. The defect detection system comprises a controller for toggling the state of a light source, which may allow for fast simultaneous high-speed inspection and high-resolution review imaging of the device under test by the same system and simultaneously deliver inspection, computer generated reconstructions or tomography, and defect review on sub second time-scales. The defect detection system further comprises a converter for converting X-ray images of the device under test into photoelectron contrast images to achieve nanometer scale measurement resolution in non-destructive and real-time fashion, to complement or replace destructive TEM. These photoelectron contrast images may be received by a detector to output an electronic format map or 3D/4D image that indicates one or more features of the device under test.