X-ray Scattering Alignment for Nano-Scale Plate Precision
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Solution Overview
Problem
Current alignment techniques, such as mechanical and optical alignment, are inadequate for the precise alignment required in 10-nanometer or less semiconductor fabrication processes.
Innovation Solution
An apparatus and method utilizing composite small-angle X-ray scattering to align two plates by detecting and adjusting to the composite amplitude distribution of X-ray scattering patterns, ensuring precise parallel orientation and alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mechanical alignment or optical alignment is used, then the alignment process is simple and fast, but the alignment precision is insufficient for 10-nanometer fabrication process requirements
Solution Approach 1:
The patent replaces mechanical alignment systems with X-ray scattering-based alignment. Instead of using mechanical pins and notches, the system uses X-ray scattering patterns to detect and correct misalignment, achieving sub-nanometer precision without mechanical contact.
Solution Approach 2:
The patent changes the measurement parameter from visible/infrared light (optical alignment) to X-ray scattering. By using X-rays with wavelengths suitable for nano-scale measurement, the system achieves the required alignment precision for 10-nanometer fabrication processes.
2Manufacturing precision
If optical alignment using visible or infrared light is used, then the alignment method is straightforward, but the wavelength is too long to achieve precise alignment for nano-scale features
Solution Approach 1:
The patent changes the electromagnetic radiation parameter from visible/infrared light to X-rays. This parameter change enables precise alignment for nano-scale features by using the shorter wavelength of X-rays, which provides better resolution for detecting sub-nanometer misalignments.
3Measurement precision
If traditional alignment methods are used, then the equipment is simple and easy to operate, but the measurement precision is insufficient for detecting sub-nanometer misalignment
Solution Approach 1:
The patent replaces mechanical measurement systems with X-ray scattering-based measurement. The system uses a detector to capture X-ray scattering patterns from the wafer surface, and algorithms to analyze these patterns for sub-nanometer misalignment detection, achieving high precision without mechanical measurement tools.
Solution Approach 2:
The patent introduces X-ray scattering patterns as an intermediary between the alignment system and the wafer. Instead of directly measuring physical dimensions, the system uses X-ray scattering patterns as a mediator to indirectly detect and measure misalignment with sub-nanometer precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate alignment of nano-scale wafers with improved precision and reliability, leveraging the shorter wavelength and better transmittance of X-rays compared to visible or infrared light, suitable for future semiconductor technology nodes.
Implementation Method 1
detecting composite small-angle X-ray scattering emitted from patterns of the first and second plates that are perpendicularly impinged by X-ray
Data Source
AI summary
The disclosure provides an apparatus for aligning first and second plates that are parallel to each other and have the same orientation. The apparatus includes a detector that detects composite small-angle X-ray scattering emitted from patterns of the first and second plates that are perpendicularly impinged by X-ray, and a moving unit that aligns the first and second plates according to a composite amplitude distribution of the composite small-angle X-ray scattering. Therefore, the first and second plates are aligned to each other accurately.