X-ray scattering measurement for semiconductor repeat structure irregularities
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Solution Overview
Problem
Existing semiconductor device measurement methods, such as TEMs and scatterometry, face challenges in accurately measuring irregularities in repeat structures during semiconductor processes, particularly due to their destructive nature and limited resolution.
Innovation Solution
A semiconductor device measurement method using X-ray scattering, which involves preparing a semiconductor device with a repeat structure, obtaining a first X-ray scattering image, calculating a second image through simulation, generating a repeat structure mask, removing the mask from the first image to generate an error image, and analyzing this image to calculate irregularities in the repeat structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If transmission electron microscopes (TEMs) are used for measurement, then high resolution and deep depth measurement are achieved, but destructive cutting of samples and long process time are required
Solution Approach 1:
The patent replaces mechanical/electronic microscopy systems (TEM, SEM) with X-ray scattering technology. This substitution eliminates the need for destructive sample preparation and long measurement times while maintaining measurement precision through non-destructive X-ray irradiation and scattering pattern analysis
Solution Approach 2:
The patent creates a simulated X-ray scattering image that copies the expected scattering pattern from a perfect repeat structure. By comparing the actual scattering image with this simulated copy, the system can identify irregularities without requiring destructive physical analysis
2Productivity
If traditional scatterometry is used for repeat structure measurement, then periodic structures are measured, but irregularities in actual processes cannot be accurately detected
Solution Approach 1:
The patent extracts and removes the periodic repeat structure signal from the X-ray scattering image through masking techniques. This extraction process isolates the irregularity components from the dominant periodic pattern, enabling accurate detection of deviations that traditional scatterometry would miss
Solution Approach 2:
The patent introduces a simulated X-ray scattering image as an intermediary reference. This simulated image serves as a mediator between the theoretical perfect structure and the actual measured structure, allowing for precise quantification of irregularities by comparing actual scattering patterns against the simulated reference
3Loss of information
If destructive sample preparation techniques are used, then detailed structural information is obtained, but sample damage and yield loss occur
Solution Approach 1:
The patent replaces destructive mechanical sample preparation with non-destructive X-ray scattering measurement. X-rays penetrate the sample and scatter based on the internal structure, providing detailed structural information without physically cutting or damaging the sample
Solution Approach 2:
The patent obtains structural information by analyzing the scattering pattern copy rather than physically dissecting the sample. The X-ray scattering image serves as an informational copy of the internal structure, eliminating the need for destructive physical analysis
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate measurement of irregularities in semiconductor devices with repeat structures, improving process control and yield by providing detailed structural information that can be applied to process dispersion management.
Implementation Method 1
irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image
Data Source
AI summary
A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat structure, irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image, calculating a second X-ray scattering image through simulation, the second X-ray scattering image corresponding to a target repeat structure for the semiconductor device, generating a repeat structure mask by analyzing a position of a signal for a regular repeat structure from the second X-ray scattering image, removing the repeat structure mask from the first X-ray scattering image and generating an error image; and analyzing the error image and calculating irregularities for the repeat structure of the semiconductor device.