X-ray Sensor Barrier Layers for Detection Accuracy
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Solution Overview
Problem
Conventional X-ray sensors face challenges in detection accuracy due to the impact of subsequent processes on semiconductor layers, leading to suboptimal performance.
Innovation Solution
The X-ray detection device incorporates two transistors with different semiconductor materials, namely silicon and metal oxide semiconductors, and employs first and second barrier layers to improve the quality and electrical performance of the semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional transistors with semiconductor layers are used in X-ray sensors, then the device structure is simple, but the detection accuracy deteriorates due to hydrogen ion diffusion and subsequent process effects
Solution Approach 1:
A barrier layer is introduced as an intermediary component between the semiconductor layer and subsequent structures. This barrier layer specifically prevents hydrogen ion diffusion into the semiconductor layer while allowing the device to maintain its functional simplicity. The barrier layer acts as a protective mediator that resolves the contradiction by blocking harmful hydrogen ions without complicating the overall device architecture.
Solution Approach 2:
The device structure is segmented into distinct functional layers, with the barrier layer separated from both the semiconductor layer and the overlying structures. This segmentation allows the barrier layer to independently perform its protective function of preventing hydrogen ion diffusion, thereby improving detection accuracy without requiring complex integrated structures.
2Measurement precision
If barrier layers are added to prevent hydrogen ion diffusion, then detection accuracy improves, but device complexity increases
Solution Approach 1:
The barrier layer serves as a dedicated intermediary component that specifically addresses hydrogen ion diffusion. By placing this barrier layer at the critical interface, the patent achieves improved detection accuracy through a single, well-positioned protective layer rather than complex multi-layer structures, thus minimizing the increase in device complexity.
Solution Approach 2:
The barrier layer is applied locally at the specific interface where hydrogen ion diffusion occurs, rather than throughout the entire device structure. This localized approach improves detection accuracy precisely where needed while minimizing the overall complexity increase, as only the critical region is modified with the barrier layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of barrier layers enhances the detection accuracy and electrical performance of the X-ray detection device, allowing for improved sensing effects and reduced hydrogen ion diffusion into metal oxide semiconductors.
Implementation Method 1
By disposing the barrier layers, the quality of the semiconductor layers of the transistors can be improved... reduced hydrogen ion diffusion into metal oxide semiconductors
Implementation Method 2
a sensor configured to receive a light and output a signal
Data Source
AI summary
An electronic device includes a substrate, a silicon semiconductor disposed on the substrate, an oxide semiconductor disposed on the substrate, a sensor configured to receive a light and output a signal, and a light-shielding element including a conductive material and disposed between the sensor and the oxide semiconductor. The oxide semiconductor is electrically connected to the silicon semiconductor. The silicon semiconductor and the oxide semiconductor are active corresponding to the signal.