X-Ray Sensor Transistor Stack With Barrier Layers for Detection Accuracy
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Solution Overview
Problem
Conventional X-ray sensors face challenges in detection accuracy due to the impact of subsequent processes on semiconductor layers, leading to suboptimal performance.
Innovation Solution
The X-ray detection device incorporates two transistors with different semiconductor materials, namely silicon and metal oxide semiconductors, and employs first and second barrier layers to improve the quality and electrical performance of the semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional pixel array with transistors is used, then the X-ray sensor can be manufactured, but the semiconductor layers are affected by subsequent processes leading to reduced detection accuracy
Solution Approach 1:
A barrier layer is introduced as an intermediary between the semiconductor layer and subsequent processing layers. This barrier layer prevents harmful interactions (such as hydrogen diffusion or stress transfer) from subsequent processes affecting the semiconductor layer, thereby protecting the detection accuracy while allowing the device to be manufactured.
2Measurement precision
If barrier layers are added to protect semiconductor layers, then detection accuracy is improved, but device structure becomes more complex
Solution Approach 1:
The barrier layer is applied selectively only where needed - specifically between the semiconductor layer and areas affected by subsequent processes. This localized approach provides protection exactly where the harmful effects occur without adding unnecessary complexity to the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of barrier layers enhances the detection accuracy and effectiveness of the X-ray detection device by mitigating hydrogen ion diffusion and improving transistor performance.
Implementation Method 1
By disposing the barrier layers, the quality of the semiconductor layers of the transistors can be improved, and the electrical performance of the transistors can also be raised
Data Source
AI summary
An electronic device including a substrate, a silicon transistor disposed on the substrate, an oxide transistor disposed on the substrate and electrically connected to the silicon transistor, and a sensor configured to receive a light and output a signal. The silicon transistor and the oxide transistor are operated corresponding to the signal.