X-Ray Detector Trace Routing to Mitigate Crosstalk Triggering
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Solution Overview
Problem
Existing X-ray detectors suffer from undesired trace triggering and non-local crosstalk effects due to wiring traces being routed away from detector elements, leading to inaccurate signal attribution and reduced performance.
Innovation Solution
The implementation of detector sub-modules with wiring traces routed within gaps between detector elements, use of doped implants to shield traces, increased insulation thickness, rerouting techniques, and coincidence detection to accurately attribute X-ray hits to the correct pixel, along with pre-exposure to X-rays to reduce electrical coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wiring traces are routed away from detector elements to readout circuitry, then electrical connection is established, but trace triggering and non-local crosstalk effects occur leading to inaccurate signal attribution
Solution Approach 1:
The patent routes wiring traces in the gap region between adjacent detector elements rather than away from them, utilizing the vertical/dimensional space between elements to conduct signals directly to readout circuitry. This eliminates trace triggering and non-local crosstalk by keeping traces spatially separated from detector active regions while maintaining electrical connectivity.
Solution Approach 2:
The patent extracts the wiring traces from the detector element regions and places them exclusively in the gap regions between elements. This separation removes the source of trace triggering and crosstalk effects, as traces no longer pass through or near the sensitive detector volumes where they could induce false signals.
2Object-affected harmful factors
If doped implants are used to shield wiring traces, then electrical coupling is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent combines the doped implant structure with the existing detector element fabrication process. The implants are formed in the gap regions between detector elements during the same manufacturing sequence, utilizing existing implantation equipment and process steps rather than requiring separate specialized manufacturing operations.
Solution Approach 2:
The doped implants act as intermediary shielding structures between the wiring traces and the bulk semiconductor. These implants create localized electric field modifications that reduce capacitive coupling and electrical interference without requiring direct contact with or modification of the trace geometry itself.
3Object-affected harmful factors
If increased insulation thickness is applied, then electrical isolation is improved, but detector element spacing must increase
Solution Approach 1:
The patent applies insulation selectively in the gap regions between detector elements rather than uniformly across the entire detector surface. This localized insulation approach provides adequate electrical isolation for the wiring traces while minimizing the area consumed by insulation material, allowing tighter overall packing of detector elements.
Solution Approach 2:
The patent utilizes the vertical dimension and the lateral gap space between elements to accommodate insulated traces, rather than increasing horizontal spacing. By routing traces through the existing gap regions with localized insulation, the design maintains compact detector module area while achieving sufficient electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Mitigates trace triggering and crosstalk effects, improving the performance of silicon-based photon-counting detectors by reducing false triggers and enhancing detection accuracy.
Implementation Method 1
The first doped implant extends underneath a portion of the wiring traces and is configured to shield the wiring traces from electrical activity occurring underneath due to absorption of an X-ray
Implementation Method 2
a first exposure of X-rays creates an accumulated charge near a surface of the semiconductor layer underneath the wiring traces. The method also includes utilizing the X-ray detector during a second exposure of X-rays when imaging the object while electrical coupling between the wiring traces and a portion of the semiconductor layer underlying the wiring traces is reduced due to the first exposure of X-rays
Data Source
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Figure 3~5
AI summary
An X-ray detector is provided. The X-ray detector includes multiple detector sub-modules. Each detector sub-module includes a semiconductor layer and multiple detector elements. A first detector element of the multiple detector elements includes a first electrode disposed on a first doped implant and a second detector element of the multiple detector elements includes a second electrode disposed on a second doped implant. The first and second detector elements are disposed on the semiconductor layer adjacent to each other with a gap therebetween. Each detector sub-module also includes wiring traces extending from one or more detector elements of the multiple detector elements to readout circuitry. The wiring traces are routed within the gap between the first and second electrodes. The first doped implant extends underneath a portion of the wiring traces is configured to shield the wiring traces from electrical activity occurring underneath due to absorption of an X-ray.