XRD Test Pattern for Semiconductor Alloy Measurement

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Solution Overview

Problem

Current XRD techniques face challenges in accurately measuring parameters like strain, dopant concentration, and thickness of semiconductor alloys due to insufficient X-ray signal strength, which affects the quality and device characteristics of semiconductor materials.

Innovation Solution

A test pattern with regions of varying test structure sizes and electrical isolation is implemented on a wafer, enhancing X-ray signal strength by simulating different device sizes and allowing faithful conveyance of semiconductor alloy parameters through XRD.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional XRD measurement is used on semiconductor alloys, then measurement can be performed, but X-ray signal strength is insufficient leading to poor measurement precision

Engineering Contradiction:

Improvemeasurement precisionVSAvoidX-ray signal strength

Core Design Contradiction:

Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent divides the wafer into multiple regions (first region to Nth region) with different test structure sizes. This segmentation allows the XRD measurement to capture signals from structures of varying dimensions, improving the overall signal strength and measurement precision for semiconductor alloy characterization.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent varies the size parameter of test structures across different regions on the wafer. By creating test structures with different dimensions (smaller in first region, larger in Nth region), the X-ray diffraction signal strength is enhanced, enabling more precise measurement of semiconductor alloy parameters such as strain, composition, and thickness.

Inventive Principle:

Principle #35Parameter changes

2Ease of manufacture

If test structures of uniform size are used, then manufacturing is simple, but the measurement cannot faithfully represent devices of different sizes

Engineering Contradiction:

Improveease of manufactureVSAvoidreliability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality by creating regions with different test structure sizes tailored to represent different device characteristics. Each region's test structures are optimized to simulate specific device size scenarios, ensuring that the measurement results are representative of various device configurations while maintaining a systematic manufacturing approach.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The test pattern improves X-ray signal strength, enabling accurate measurement of semiconductor alloy parameters and device characteristics, ensuring reliable quality assessment and process control.

Implementation Method 1

measuring semiconductor alloys using XRD technique

Methodology Applied

Scientific EffectX-ray diffraction: X-Ray

Implementation Method 2

test pattern for measuring semiconductor alloys using X-ray Diffraction

Methodology Applied

Scientific EffectDiffraction: Diffraction

Data Source

PatentUS8519390B2Test pattern for measuring semiconductor alloys using X-ray Diffraction

Publication Date: 2013.08.27 UNITED MICROELECTRONICS CORP

AI summary

A test pattern for measuring semiconductor alloys using X-ray diffraction (XRD) includes a first region to an Nth region defined on a wafer, and a plurality of test structures positioned in the first region and so forth up to in the Nth region. The test structures in the same region have sizes identical to each other and the test structures in different regions have sizes different from each other.