Y2O3 Solid-Solution Coating for Plasma Etch Erosion Resistance
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Solution Overview
Problem
Existing Y2O3-containing solid solutions do not meet the stringent plasma resistance requirements for advanced semiconductor production, particularly in forming circuits with line widths of 20 nm or narrower, as they fail to adequately prevent microparticle formation and chamber wear during plasma etching.
Innovation Solution
A Y2O3-containing solid solution deposition material is developed, incorporating specific amounts of ZrO2, HfO2, or Nb2O5 to form a uniform solid solution with a Y2O3 regular hexahedral crystal structure, enhancing plasma resistance by addressing oxygen vacancies and maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional Y2O3 thermal spray coating is used to protect the chamber, then plasma resistance is improved, but microparticle formation still occurs and erosion resistance is insufficient for 20 nm line width requirements
Solution Approach 1:
The patent applies composite materials by combining Y2O3 with other oxide materials (such as Al2O3, ZrO2, HfO2, Nb2O5, Ta2O5, or SiO2) to form a composite coating layer. This composite structure leverages the synergistic effects of different materials to achieve both high plasma resistance and reduced microparticle formation, resolving the contradiction between protection effectiveness and particle generation.
Solution Approach 2:
The patent changes the chemical composition parameters of the coating material by incorporating multiple oxide components in specific ratios. By adjusting the compositional parameters of the composite material, the coating achieves optimized plasma erosion resistance while minimizing particle generation, meeting the stringent requirements for 20 nm line width semiconductor fabrication.
2Duration of action of stationary object
If the chamber is covered with ceramic materials to prevent abrasion, then durability against plasma exposure is improved, but the complexity of the coating process increases
Solution Approach 1:
The composite oxide coating serves multiple functions simultaneously: it provides plasma erosion resistance, reduces microparticle formation, and maintains structural integrity. This multi-functionality eliminates the need for multiple separate coating layers or complex protective systems, simplifying the overall device structure while achieving enhanced durability.
3Manufacturing precision
If high-energy and high-density ions and radicals are emitted to create vertical profiles, then etching precision is improved, but wear and particle generation on chamber materials increases
Solution Approach 1:
The patent converts the harmful effect of high-energy ion and radical bombardment into a beneficial protective mechanism. The composite oxide coating is specifically designed to withstand and resist the erosive action of high-energy plasma particles, transforming the potentially damaging environment into a condition where the coating becomes even more effective at protecting the underlying structure and preventing particle generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The deposition material significantly reduces plasma-induced erosion, thereby improving the plasma resistance of etching device members, such as chambers and electrostatic chucks, by minimizing particle formation and maintaining structural integrity during plasma exposure.
Implementation Method 1
yttrium oxide (Y2O3) is known to have high plasma resistance to halogen-containing plasmas to be used for production of a semiconductor device
Implementation Method 2
the material to be etched is removed not only through the physical sputtering effect, but also through the chemical sputtering effect by exposing the wafer to plasma using a halogenated gas
Implementation Method 3
a Y2O3-containing solid solution deposition material comprising a solid solution containing a metal oxide selected from ZrO2, HfO2 and Nb2O5, and Y2O3
Implementation Method 4
the solid solution has a Y2O3 regular hexahedral crystal structure
Data Source
AI summary
To provide a Y2O3-containing deposition material having high plasma resistance, suitable as a plasma etching device member, and a method for producing it.A deposition material comprising a solid solution containing a metal oxide selected from ZrO2, HfO2 and Nb2O5, and Y2O3, wherein when the metal oxide is ZrO2, the ZrO2 content is from 2 to 12 mol %, when the metal oxide is HfO2, the HfO2 content is from 4 to 24 mol %, and when the metal oxide is Nb2O5, the Nb2O5 content is from 1 to 8 mol %, and the solid solution has a Y2O3 regular hexahedral crystal structure.