Y4Al2O9 Composite Coating for Low-Particle Plasma Resistance

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Solution Overview

Problem

Semiconductor manufacturing devices face challenges in achieving low-particle generation due to plasma corrosion, particularly with the advancement of miniaturization, where existing ceramic coatings do not adequately resist fluorine-based plasmas.

Innovation Solution

A composite structure with Y4Al2O9 as the main component, having an indentation hardness greater than 6.0 GPa, is used to enhance low-particle generation by forming a ceramic coat on a substrate, which is resistant to corrosive fluorine-based plasmas, and can be applied as a member within semiconductor manufacturing devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If oxide-based ceramics such as alumina and yttria are used for coating, then plasma resistance is improved, but particle generation increases under fluorine-based plasma corrosion

Engineering Contradiction:
Improveplasma resistanceVSAvoidparticle generation
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The invention changes the material parameters by selecting Y4Al2O9 (YAM) ceramic with specific physical and chemical properties including indentation hardness greater than 6.0 GPa, specific density range, and particular thermal expansion coefficient, thereby achieving both plasma resistance and low particle generation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses Y4Al2O9 ceramic as a coating layer on a substrate, creating a composite structure that combines the advantages of ceramic material (plasma resistance) with controlled hardness properties (low particle generation), resolving the contradiction between durability and contamination

Inventive Principle:
Principle #40Composite materials

2Productivity

If miniaturization of semiconductor devices is advanced, then device performance is improved, but the requirement for low-particle generation becomes more stringent

Engineering Contradiction:
Improvedevice performanceVSAvoidparticle contamination
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The invention addresses the stricter contamination requirements by changing the material parameters of the ceramic coating, specifically selecting Y4Al2O9 with indentation hardness >6.0 GPa, which demonstrates superior resistance to particle generation in miniaturized semiconductor manufacturing environments

Inventive Principle:
Principle #35Parameter changes

3Reliability

If ceramic coating is applied to substrate, then plasma corrosion resistance is improved, but hardness control becomes critical to prevent particle generation

Engineering Contradiction:
Improvecorrosion resistanceVSAvoidhardness control
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The invention resolves this contradiction by precisely controlling the hardness parameter of the ceramic coating through material selection, specifying that Y4Al2O9 ceramic with indentation hardness greater than 6.0 GPa should be used, thereby achieving both corrosion resistance and appropriate hardness for low particle generation

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composite structure effectively reduces particle generation by maintaining crystal structure integrity and lowering fluorine atom concentration, even under exposure to corrosive plasmas, thereby improving the performance of semiconductor manufacturing devices.

Implementation Method 1

the structure contains Y4Al2O9 as a main component, and an indentation hardness thereof is greater than 6.0 GPa... resistant to corrosive fluorine-based plasmas

Methodology Applied
Scientific EffectPlasma corrosion resistance: Plasma

Data Source

PatentUS20240166567A1Composite structure and semiconductor manufacturing device provided with the composite structure
Publication Date: 2024.05.23 TOTO LTD
  • US20240166567A1 patent drawing
  • US20240166567A1 patent drawing
  • US20240166567A1 patent drawing

AI summary

Disclosed are a composite structure, which is able to enhance low-particle generation so that this can be used as a member for a semiconductor manufacturing device, and a semiconductor manufacturing device provided with the composite structure. The composite structure has a substrate and a structure that is provided on the substrate and has a surface, in which the structure contains Y4Al2O9 as a main component, and an indentation hardness thereof is greater than 6.0 GPa, thereby having excellent low-particle generation, so that this may be suitably used as a member for a semiconductor manufacturing device.