Y4Al2O9 Composite Structure for Low-Particle Plasma Resistance
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Solution Overview
Problem
Semiconductor manufacturing devices face challenges in achieving low-particle generation due to plasma corrosion, particularly with the advancement of miniaturization, where existing ceramic coatings do not adequately address the requirement for improved plasma resistance.
Innovation Solution
A composite structure is developed with Y4Al2O9 as the main component, featuring specific lattice constants and peak intensity ratios, which is applied to a substrate to enhance low-particle generation by forming a ceramic coat that resists plasma corrosion effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ceramic coatings (alumina, yttria, yttrium fluoride) are used for plasma resistance, then plasma resistance is improved, but particle generation increases
Solution Approach 1:
The invention changes the crystallographic parameters of Y4Al2O9 by controlling lattice constants (a>7.382, b>10.592, c>11.160) and peak intensity ratios (β/α between 1.15-2.0) to achieve a specific monoclinic crystal structure that simultaneously provides plasma resistance and low particle generation
Solution Approach 2:
The invention uses Y4Al2O9 as a composite ceramic material with specific crystal structure characteristics, combining the benefits of plasma resistance from traditional ceramics while eliminating the particle generation problem through precise control of crystallographic parameters
2Productivity
If miniaturization of semiconductor devices is advanced, then device performance is improved, but requirements for low-particle generation become more stringent
Solution Approach 1:
By precisely controlling the lattice constants and peak intensity ratio parameters of Y4Al2O9, the invention creates a material that meets the increasingly stringent low-particle generation requirements associated with semiconductor miniaturization
3Stability of the object's composition
If Y4Al2O9 with conventional lattice constants is used, then material stability is improved, but plasma resistance and low-particle generation are insufficient
Solution Approach 1:
The invention optimizes the lattice constant parameters (a>7.382, b>10.592, c>11.160) and peak intensity ratio (β/α between 1.15-2.0) of Y4Al2O9 to achieve a balance between material stability and enhanced plasma resistance with low particle generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite structure significantly reduces fluorine atom concentration at specific depths after plasma exposure, demonstrating improved resistance to plasma corrosion and low-particle generation, making it suitable for semiconductor manufacturing devices.
Implementation Method 1
the structure contains Y4Al2O9 as a main component, and lattice constants calculated by the following formula (1) meet at least one of a>7.382, b>10.592 and c>11.160
Implementation Method 2
a peak intensity ratio y calculated by the following formula (2) is 1.15 or more and 2.0 or less. γ=β/α (2) (In the formula 2, a is a peak intensity at diffraction angle 2θ=29.6°, which is attributable to the Miller indices (hkl)=(122), and β is a peak intensity at diffraction angle 2θ=30.6°, which is attributable to the Miller indices (hkl)=(211), in a Y4Al2O9 monoclinic crystal.)
Data Source
AI summary
Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.