YAG Ceramic Composite Coating for Low-Particle Plasma Resistance
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Solution Overview
Problem
Semiconductor manufacturing apparatuses face challenges in achieving low-particle generation due to plasma corrosion, particularly with the miniaturization of semiconductors, where existing coatings do not adequately resist fluorine-based plasma exposure.
Innovation Solution
A composite structure with Y3Al5O12 as the main component, providing an indentation hardness greater than 8.5 GPa, is used as a ceramic coating on a base material, which includes additional oxides and fluorides, and is applied using aerosol deposition to enhance resistance to fluorine-based plasma exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxide-based ceramics or fluoride-based ceramics are used as coating materials, then plasma resistance is improved, but particle generation due to plasma corrosion increases
Solution Approach 1:
The patent applies composite materials by combining Y3Al5O12 (YAG) with additional oxides (such as SiO2, Al2O3, TiO2) and fluorides (such as YF3, YOF) to create a multi-component ceramic coating. This composite structure achieves both high plasma resistance and low particle generation by leveraging the complementary properties of different materials - YAG provides hardness and chemical stability while the added oxides and fluorides enhance plasma resistance and reduce particle formation under fluorine-based plasma exposure
2Object-generated harmful factors
If the hardness of the structure is increased to reduce particle generation, then low-particle generation is improved, but the coating becomes more brittle and less resistant to plasma corrosion
Solution Approach 1:
The patent applies parameter changes by precisely controlling the indentation hardness of the Y3Al5O12-based structure to be greater than 8.5 GPa (preferably 9.0-15.0 GPa). This specific hardness range optimizes the balance between particle generation resistance and plasma corrosion resistance. The hardness is controlled through compositional adjustments (adding oxides and fluorides) and processing parameters (aerosol deposition conditions, sintering temperature) to achieve the desired mechanical properties without excessive brittleness
3Productivity
If miniaturization of semiconductors is pursued, then device performance is improved, but the requirement for low-particle generation becomes more stringent
Solution Approach 1:
The patent applies preliminary anti-action by pre-forming a Y3Al5O12-based ceramic coating with optimized hardness (>8.5 GPa) and compositional structure before plasma exposure occurs. This pre-engineered coating structure proactively prevents particle generation during subsequent plasma processing, addressing the stringent low-particle generation requirements enabled by semiconductor miniaturization. The coating is designed in advance to resist fluorine-based plasma corrosion and minimize particle formation during device fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite structure significantly reduces fluorine atom concentration at specific depths from the surface after plasma exposure, minimizing particle generation and corrosion, thus improving the performance of semiconductor manufacturing apparatuses.
Implementation Method 1
a member for a semiconductor manufacturing apparatus used under a plasma exposure environment
Implementation Method 2
applied using aerosol deposition to enhance resistance to fluorine-based plasma exposure
Data Source
AI summary
Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.