Yttria Liner Fluorination Using Atmospheric Plasma Cleaning
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Solution Overview
Problem
Existing methods for forming a fluoride layer on semiconductor dry etching systems are economically inefficient, require hazardous materials, and result in low fluorination rates, leading to reduced productivity and increased manufacturing costs.
Innovation Solution
A fluorination cleaning device and apparatus using plasma heat treatment with CF4 reactive gas to form a yttrium oxyfluoride (YOF) layer on yttria-coated parts, employing a process chamber with specific electrode configurations and controlled gas flow to enhance fluorination efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If low-pressure vacuum plasma is used for fluorination, then the process can be performed with simple equipment, but the fluorine radical density is low resulting in low fluorination rate
Solution Approach 1:
The patent changes the pressure parameter from low-pressure to atmospheric pressure, and changes the plasma generation method from RF plasma to dielectric barrier discharge (DBD) plasma. This combination achieves high fluorine radical density at atmospheric pressure, resolving the contradiction between equipment simplicity and fluorination rate by using a different plasma generation mechanism that is effective at atmospheric pressure
Solution Approach 2:
The patent replaces the RF plasma generation system with a dielectric barrier discharge system. The DBD plasma generator uses a different physical mechanism (corona discharge through a dielectric barrier) compared to traditional RF plasma, enabling efficient fluorine radical generation at atmospheric pressure without requiring complex vacuum equipment
2Productivity
If hazardous fluorination solutions are used, then fluorination can be achieved, but process safety is compromised
Solution Approach 1:
The patent replaces chemical solution-based fluorination with plasma-based fluorination. The dielectric barrier discharge plasma generates fluorine radicals in the gas phase (using CF4 or SF6), which then react with the substrate surface. This substitution eliminates the need for hazardous liquid fluorination solutions while maintaining effective fluorination capability
Solution Approach 2:
The patent changes the fluorination method from liquid-phase chemical reaction to gas-phase plasma reaction. By using fluorocarbon gases (CF4, SF6) in a DBD plasma process, the system achieves fluorination through reactive fluorine species generated in situ, avoiding the safety issues associated with handling and heating hazardous fluorination solutions
3Reliability
If coating raw materials such as AlF3 or YF3 are used, then fluoride coating can be formed, but the raw material price is very high and supply is limited
Solution Approach 1:
The patent replaces physical vapor deposition or chemical vapor deposition of expensive fluoride powders with plasma-enhanced in-situ fluorination. The process uses inexpensive fluorocarbon gases (CF4, SF6) that decompose in plasma to form fluorine radicals, which then react with the substrate to form the fluoride layer. This eliminates the need for expensive AlF3 or YF3 raw materials
Solution Approach 2:
The patent changes from using solid fluoride powder materials to using gaseous fluorocarbon compounds. The transition from AlF3/YF3 powders to CF4/SF6 gases fundamentally changes the material form and delivery mechanism, enabling cost-effective fluorination through plasma decomposition of inexpensive fluorocarbon gases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides efficient, safe, and cost-effective fluorination, extending coating life, reducing contaminant particle generation, and ensuring a normal etching rate, thereby improving productivity and economic efficiency.
Implementation Method 1
a plasma power electrode member composed of electrode members arranged in the process chamber body at a distance from each other in a radial direction
Implementation Method 2
fluorination cleaning device for cleaning a liner-type part having an yttria (Y2O3) coating layer... using process gases, including CF4 reactive gas... to form a yttrium oxyfluoride (YOF) layer
Implementation Method 3
a heating member provided in the process chamber body
Data Source
AI summary
Disclosed are a fluorination cleaning device for cleaning a liner-type part for a semiconductor dry etching system and a fluorination cleaning apparatus for forming yttrium oxyfluoride on an yttria-coated part including the same, which may easily form an yttrium oxyfluoride layer on an yttria-coated part using process gas under specific conditions. The fluorination cleaning device includes: a process chamber body; a process gas inlet provided on one side of the process chamber body and configured to introduce process gases; a process gas outlet provided on the other side of the process chamber body and configured to discharge the process gases; a heating member provided in the process chamber body; a plasma power electrode member composed of electrode members arranged in the process chamber body at a distance from each other in a radial direction; and a support plate provided at the bottom inside the process chamber body.