Yttrium ALD Precursor Composition for Low-Melting Stable Thin Films
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing thin-film forming raw materials for atomic layer deposition (ALD) methods lack thermal stability, have high melting points, and result in high residual carbon content, limiting high-productivity production of high-quality thin-films.
Innovation Solution
A thin-film forming raw material comprising an yttrium compound with a specific structure, represented by general formula (1), is used in the ALD method, featuring low melting point and high thermal stability, allowing for the production of high-quality thin-films with reduced residual carbon content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional yttrium compounds are used as thin-film forming raw materials for ALD method, then the raw materials can be used in CVD method, but they lack thermal stability and have high melting points making them unsuitable for ALD method
Solution Approach 1:
The patent changes the chemical structure parameters of the yttrium compound by selecting specific β-diketone ligands with particular R1, R2, and R3 groups. This structural parameter change results in compounds with lower melting points and higher thermal stability, making them suitable for ALD method while maintaining CVD method applicability.
Solution Approach 2:
The patent creates composite molecular structures combining yttrium metal center with specifically designed organic β-diketone ligands. This composite approach allows tuning of physical properties (melting point and thermal stability) while maintaining the yttrium component's functionality for thin-film formation in both CVD and ALD methods.
2Manufacturing precision
If conventional yttrium compounds are used in ALD method, then thin-films can be produced, but the residual carbon content is high reducing film quality
Solution Approach 1:
The patent changes the ligand structure parameters (R1, R2, R3 groups) to optimize the carbon content and decomposition characteristics of the precursor. This parameter optimization reduces residual carbon in the final thin-film while maintaining the compound's effectiveness as an ALD raw material.
3Productivity
If conventional yttrium compounds are used in ALD method, then production can proceed, but productivity is low due to high melting points and poor thermal stability
Solution Approach 1:
The patent optimizes the molecular structure parameters of the yttrium compound to achieve lower melting points and improved thermal stability. These parameter changes enable more efficient processing conditions in ALD method, thereby improving productivity while maintaining or enhancing thermal stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The yttrium compound enables high-productivity production of high-quality thin-films with improved thermal stability and reduced residual carbon content, suitable for applications in atomic layer deposition methods.
Implementation Method 1
causing the yttrium compound in a raw material gas, which is obtained by vaporizing the thin-film forming raw material, to adsorb to the surface of the substrate to form a precursor thin-film
Implementation Method 2
causing the precursor thin-film to react with a reactive gas to form the thin-film containing an yttrium atom on the surface of the substrate
Implementation Method 3
causing the yttrium compound in a raw material gas, which is obtained by vaporizing the thin-film forming raw material
Data Source
AI summary
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.