Yttrium Compound Coating for Semiconductor Chamber Member
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Solution Overview
Problem
Semiconductor manufacturing devices face challenges in reducing particles generated from the chamber and its components, leading to decreased yield and productivity due to insufficient plasma resistance and coating durability issues, particularly with yttria sprayed films that are prone to cracking and peeling.
Innovation Solution
A member for semiconductor manufacturing devices featuring an alumite base material with a first layer containing yttrium compounds, where the first layer has a dense structure on the surface and a sparse structure in concavities, effectively improving plasma resistance and reducing stress at the interface, thereby preventing peeling and particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a yttria sprayed film is formed on the surface to improve plasma resistance, then plasma resistance is improved, but cracking and peeling occur reducing durability
Solution Approach 1:
The invention applies local quality by creating different crystal structures in different regions of the coating. The surface region has a monoclinic crystal structure providing density and plasma resistance, while the inner region has a cubic crystal structure providing stress relief and preventing peeling. This spatial variation in material properties resolves the contradiction between plasma resistance and durability.
Solution Approach 2:
The invention uses composite materials by combining two different crystal phases (monoclinic and cubic) within the same yttrium oxide coating. This composite structure allows the coating to simultaneously exhibit the beneficial properties of both phases: the monoclinic phase provides plasma resistance through density, while the cubic phase provides stress relief through its crystal structure, thereby improving overall durability.
2Reliability
If the coating structure is made dense to improve plasma resistance, then plasma resistance is improved, but stress accumulates causing peeling
Solution Approach 1:
The invention applies local quality by creating different crystal structures in different regions of the coating. The surface region has a monoclinic crystal structure providing density and plasma resistance, while the inner region has a cubic crystal structure providing stress relief and preventing peeling. This spatial variation in material properties resolves the contradiction between plasma resistance and durability.
Solution Approach 2:
The invention uses parameter changes by controlling the crystal phase composition at different depths of the coating. By changing the crystal structure parameter (monoclinic at surface, cubic at inner region) and the particle size distribution, the coating achieves both high plasma resistance and low stress accumulation, preventing interface peeling.
3Manufacturing precision
If particles are reduced to improve yield, then manufacturing precision is improved, but control at nanometer level is required increasing complexity
Solution Approach 1:
The invention applies self-service by designing a coating structure that automatically reduces particle generation through its inherent properties. The dense monoclinic surface structure prevents particle shedding, while the cubic inner structure prevents peeling. This self-regulating structure reduces particles without requiring complex external control systems, thereby improving manufacturing precision without significantly increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances plasma resistance and reduces particle generation by maintaining the dense structure on the surface and relaxing stress in concavities, leading to improved durability and reduced particle formation, thus enhancing the manufacturing process's efficiency and yield.
Implementation Method 1
Since the second region has a sparse structure, a stress generated near the interface of the first layer in the concavity and the alumite base material can be released and relaxed
Implementation Method 2
a plasma resistance can be improved
Data Source
AI summary
According to one embodiment, a member for a semiconductor manufacturing device includes an alumite base material including a concavity, and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes a first region, and a second region provided in the concavity and located between the first region and the alumite base material. An average particle diameter in the first region is shorter than an average particle diameter in the second region.