Yttrium/Lanthanide Precursor Composition for Low-Viscosity ALD Films
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Solution Overview
Problem
Existing yttrium and lanthanide metal precursor compounds for semiconductor manufacturing are solid or highly viscous liquids with low vapor pressure, making them unsuitable for chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes in mass production.
Innovation Solution
Development of a novel yttrium or lanthanide metal precursor compound represented by (R1Cp)2M[(CH3)2CH—N—C(CH2CH3)═N—CH(CH3)2] with lower viscosity and thermal stability, allowing for the formation of yttrium- or lanthanide metal-containing films through ALD or CVD processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional yttrium or lanthanide metal precursor compounds are used, then the film can be formed by CVD or ALD method, but the precursor has high viscosity and low vapor pressure making it unsuitable for mass production
Solution Approach 1:
The patent changes the chemical structure parameters of the precursor compound by introducing specific ligands (β-diketonate, amine, or amino alcohol groups) to modify physical properties. This results in a precursor with lower viscosity and higher vapor pressure while maintaining film formation capability, making it suitable for CVD and ALD processes in mass production
Solution Approach 2:
The invention creates a composite precursor structure combining yttrium or lanthanide metal center with organic ligands (β-diketonate, amine, or amino alcohol groups). This composite molecular structure achieves optimal balance between volatility for vapor deposition and stability for uniform film formation
2Ease of operation
If a precursor compound with lower viscosity is needed for ALD method, then the film deposition can be improved, but the thermal stability must be maintained
Solution Approach 1:
The patent modifies molecular parameters by selecting specific ligand types (β-diketonate, amine, or amino alcohol) with appropriate chain lengths and functional groups. This optimization achieves lower viscosity for better pumpability and vaporization while the stable metal-ligand coordination maintains thermal stability during ALD processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel precursor compound enables the formation of uniform films with controlled thickness on substrates with complex geometries, even at high temperatures, enhancing the manufacturing of semiconductor devices like DRAMs and nonvolatile resistance switching memory devices.
Implementation Method 1
a precursor compound having a lower viscosity or higher vapor pressure than a known yttrium precursor compound or lanthanide metal precursor compound is needed
Implementation Method 2
when an yttrium- or lanthanide metal-containing oxide film is formed by a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method
Implementation Method 3
when an yttrium- or lanthanide metal-containing oxide film is formed by a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method
Data Source
AI summary
The present disclosure relates to an yttrium/lanthanide metal precursor compound, a precursor composition for depositing an yttrium/lanthanide metal-containing film including the yttrium/lanthanide metal precursor compound, and a method of depositing the yttrium/lanthanide metal-containing film using the precursor composition.