Yttrium Oxide Coating for Corrosion-Resistant Semiconductor Components
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Solution Overview
Problem
Conventional coating technologies for semiconductor processing components fail to provide adequate protection against corrosion and erosion due to limitations in thickness, uniformity, and material properties, leading to increased downtime and replacement costs.
Innovation Solution
A method involving plasma electrolytic oxidation with controlled pulsing and an alkaline electrolyte is used to form a dense, yttrium-containing oxide coating on semiconductor components, followed by atomic layer deposition to enhance thickness and conformality, resulting in a composite coating with improved hardness and dielectric properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional coating technologies are used, then the coating process is simple, but the coating thickness and uniformity are insufficient leading to inadequate protection
Solution Approach 1:
The patent applies plasma electrolytic oxidation with controlled pulsing parameters (on-time, off-time, voltage, current density) to transform the coating process. By adjusting these parameters, the system achieves precise control over coating thickness (5-50 micrometers) and uniformity while maintaining complex geometries, resolving the contradiction between protection reliability and manufacturing precision
Solution Approach 2:
The patent creates a composite coating structure consisting of a porous plasma electrolytic oxidation layer containing yttrium-containing oxide, overlaid with a conformal atomic layer deposition layer. This composite structure combines the thick, protective PEO layer with the uniform, conformal ALD layer, achieving both adequate protection and precise thickness control
2Duration of action of stationary object
If conventional coating methods are used, then the process time is short, but the coating provides insufficient protection requiring frequent replacement
Solution Approach 1:
The patent performs preliminary plasma electrolytic oxidation to create a thick, protective base coating with corrosion and erosion resistance before component installation. This preliminary thick coating reduces the frequency of replacements and extends component lifespan between maintenance cycles
Solution Approach 2:
The composite coating structure combines a thick PEO layer (5-50 μm) for long-term protection with a thin ALD layer for enhanced surface properties. This combination extends component lifespan while the systematic approach reduces overall maintenance frequency and downtime
3Strength
If thicker coatings are applied to improve protection, then the material properties are enhanced, but the coating complexity and processing time increase
Solution Approach 1:
The patent segments the coating process into two distinct stages: plasma electrolytic oxidation for the thick protective base layer, and atomic layer deposition for the thin conformal top layer. Each process targets specific properties, allowing thick coatings to achieve high strength without excessive overall complexity
Solution Approach 2:
The composite coating combines a thick PEO layer (providing hardness and corrosion resistance) with a thin ALD layer (providing conformality and dielectric properties). This composite approach achieves enhanced material properties while managing process complexity through specialized division of labor between the two coating methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces coatings with increased thickness, uniform coverage, and enhanced material properties, extending component lifespan and reducing maintenance frequency in semiconductor processing systems.
Implementation Method 1
A method involving plasma electrolytic oxidation with controlled pulsing and an alkaline electrolyte is used to form a dense, yttrium-containing oxide coating on semiconductor components
Implementation Method 2
forming a yttrium-containing oxide on the semiconductor component substrate
Implementation Method 3
followed by atomic layer deposition to enhance thickness and conformality
Data Source
AI summary
Exemplary methods of coating a semiconductor component substrate may include submerging the semiconductor component substrate in an alkaline electrolyte. The alkaline electrolyte may include yttrium. The methods may include igniting a plasma at a surface of the semiconductor component substrate for a period of time less than or about 12 hours. The methods may include forming a yttrium-containing oxide on the semiconductor component substrate. A surface of the yttrium-containing oxide may be characterized by a yttrium incorporation of greater than or about 10 at. %.